HYB39S64160AT-10 SIEMENS [Siemens Semiconductor Group], HYB39S64160AT-10 Datasheet - Page 14

• Manufacturer Part Number: HYB39S64160AT-10
• Description: 64 MBit Synchronous DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70 C
Storage temperature range......................................................................................– 55 to + 150 C
Input/output voltage .............................................................................................– 0.3 to Vdd+0.3 V
Power supply voltage VDD / VDDQ.......................................................................... – 0.3 to + 4.6 V
Power Dissipation............................................. ..........................................................................1 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under “ Absolute Maximum Ratings ” may cause permanent
Recommended Operation and Characteristics for LV-TTL versions:
T
Parameter
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current, any input
(0 V <
Output leakage current
(DQ is disabled, 0 V <
Notes:
1. All voltages are referenced to VSS.
2. Vih may overshoot to Vdd + 2.0 V for pulse width of < 4ns with 3.3V. Vil may undershoot to
Capacitance
T
Parameter
Input capacitance
Input capacitance
(A0-A12, BA0,BA1,RAS, CAS, WE, CS, CKE, DQM)
Input / Output capacitance
Semiconductor Group
A
A
= 0 to 70 C;
to DC reference.
= 0 to 70 C;
-2.0 V for pulse width < 4.0 ns with 3.3V. Pulse width measured at 50% points with amplitude measured peak
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
V
IN
< Vddq, all other inputs = 0 V)
V
V
SS
DD
(CLK)
= 0 V;
I
= 3.3 V
I
OUT
OUT
V
OUT
= 4.0 mA)
= – 4.0 mA)
V
(DQ)
DD,
Vdd
0.3 V, f = 1 MHz
V
DDQ
)
= 3.3 V
Symbol
V
V
V
V
I
I
0.3 V
I(L)
O(L)
IH
IL
OH
OL
14
Symbol
C
C
C
I1
I2
IO
min.
– 0.3
2.0
2.4
– 5
– 5
Limit Values
–
64MBit Synchronous DRAM
HYB39S64400/800/160AT(L)
min.
2.5
2.5
4.0
Values
max.
Vdd+0.3
0.8
0.4
–
5
5
max.
4.0
5.0
6.5
Unit Notes
V
V
V
V
Unit
A
A
pF
pF
pF
1, 2
1, 2