HYB39S64160AT-10 SIEMENS [Siemens Semiconductor Group], HYB39S64160AT-10 Datasheet - Page 16

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HYB39S64160AT-10

Manufacturer Part Number
HYB39S64160AT-10
Description
64 MBit Synchronous DRAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
AC Characteristics 1)2)
T
Parameter
Clock and Clock Enable
Clock Cycle Time
Clock Frequency
Access Time from Clock
Clock High Pulse Width
Clock Low Pulse Width
Transition time
Setup and Hold Times
Input Setup Time
Input Hold Time
CKE Setup Time
CKE Hold Time
Mode Register Set-up time
Power Down Mode Entry Time
Common Parameters
Row to Column Delay Time
Row Precharge Time
Row Active Time
Row Cycle Time
Activate(a) to Activate(b) Command
period
CAS(a) to CAS(b) Command period
Semiconductor Group
A
= 0 to 70 C;
V
SS
= 0 V;
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
Vdd
= 3.3 V
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
0.3 V,
CK
CK
AC
CH
CL
T
IS
IH
CKS
CKH
RSC
SB
RCD
RP
RAS
RC
RRD
CCD
t
16
T
= 1 ns
min.
0.5
10
16
20
20
50
70
16
8
3
3
2
1
2
1
0
1
-8
max.
100k
125
100
10
6
6
8
64MBit Synchronous DRAM
HYB39S64400/800/160AT(L)
Limit Values
min.
0.5
10
12
20
20
30
60
80
20
3
3
2
1
2
1
0
1
-8B
max.
100k
100
83
10
10
6
7
min.
0.5
2.5
2.5
10
15
20
30
30
60
90
20
3
3
1
1
0
1
-10
max.
100k
100
66
10
10
7
8
Unit
ns
ns
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CLK
2,
3
4
4
4
4
5
5
5
5
5

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