HYB39S64160AT-10 SIEMENS [Siemens Semiconductor Group], HYB39S64160AT-10 Datasheet - Page 17

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HYB39S64160AT-10

Manufacturer Part Number
HYB39S64160AT-10
Description
64 MBit Synchronous DRAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
Parameter
Refresh Cycle
Refresh Period
(4096 cycles)
Self Refresh Exit Time
Read Cycle
Data Out Hold Time
Data Out to Low Impedance Time
Data Out to High Impedance Time
DQM Data Out Disable Latency
Write Cycle
Data Input to Precharge
(write recovery)
DQM Write Mask Latency
Semiconductor Group
Symbol
t
t
t
t
t
t
t
t
REF
SREX
OH
LZ
HZ
DQZ
WR
DQW
17
min.
10
3
0
3
2
0
-8
max.
64
8
2
64MBit Synchronous DRAM
HYB39S64400/800/160AT(L)
Limit Values
min.
10
3
0
3
2
0
-8B
max.
64
10
2
min.
10
3
0
3
2
0
-10
max.
64
10
2
Unit
ms
ns
ns
ns
ns
CLK
CLK
CLK
2

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