HYB39S64160AT-10 SIEMENS [Siemens Semiconductor Group], HYB39S64160AT-10 Datasheet - Page 42

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HYB39S64160AT-10

Manufacturer Part Number
HYB39S64160AT-10
Description
64 MBit Synchronous DRAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
17.1 Random Column Write (Page within same Bank)
DQM
Addr
CKE
RAS
CAS
CLK
BS
AP
WE
DQ
CS
Hi-Z
Command
T0
Activate
Bank B
RBz
RBz
t
CK2
T1
Command
T2
Bank B
DBw0
Write
CBz
T3
DBw1
T4
DBw2
T5
DBw3
T6
Command
Bank B
DBx0
Write
CBx
T7
DBx1
T8
Command
Bank B
DBy0
Write
CBy
T9
DBy1
T10
DBy2
T11
DBy3
T12
Precharge
Command
Bank B
T13
T14
Command
Command
Activate
Activate
Bank B
Bank B
RAw
RBz
RAw
RBz
T15
T16
Command
Command
Bank B
Bank B
DBz0
Write
Write
CAx
CBz
Burst Length = 4, CAS Latency = 2
T17
DBz1
T18
DBz2
T19
DBz3
T20
T21
T22

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