HYB39S64160AT-10 SIEMENS [Siemens Semiconductor Group], HYB39S64160AT-10 Datasheet - Page 25

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HYB39S64160AT-10

Manufacturer Part Number
HYB39S64160AT-10
Description
64 MBit Synchronous DRAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
COMMAND
CLK
COMMAND
DQ’s
5. Burst Write Operation
(Burst Length = 4, CAS latency = 2, 3)
6.1 Write Interrupted by a Write
(Burst Length = 4, CAS latency = 2, 3)
Semiconductor Group
CLK
DQ’s
are registered on the same clock edge.
The first data element and the Write
T0
T0
NOP
NOP
WRITE A
WRITE A
T1
T1
DIN A 0
DIN A 0
1 Clk Interval
WRITE B
T2
T2
NOP
DIN A 1
DIN B 0
T3
T3
NOP
DIN A 2
NOP
DIN B 1
25
T4
T4
NOP
NOP
DIN A 3
DIN B 2
Extra data is ignored after
termination of a Burst.
T5
T5
don’t care
NOP
NOP
DIN B 3
64MBit Synchronous DRAM
HYB39S64400/800/160AT(L)
T6
T6
NOP
NOP
T7
T7
NOP
NOP
T8
T8
NOP
NOP

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