HYB39S64160AT-10 SIEMENS [Siemens Semiconductor Group], HYB39S64160AT-10 Datasheet - Page 15

• Manufacturer Part Number: HYB39S64160AT-10
• Description: 64 MBit Synchronous DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Operating Currents (T
(Recommended Operating Conditions unless otherwise noted)
Notes:
3. These parameters depend on the cycle rate. These values are measured at 100 MHz for -8
4. These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3
Semiconductor Group
OPERATING CURRENT
trc=trcmin., tck=tckmin.
Ouputs open, Burst Length = 4, CL=3
All banks operated in random access,
all banks operated in ping-pong manner
to maximize gapless data access
PRECHARGE STANDBY CURRENT in
Power Down Mode
CS =VIH (min.), CKE<=Vil(max)
PRECHARGE STANDBY CURRENT in
Non-Power Down Mode
CS = VIH (min.), CKE>=Vih(min)
NO OPERATING CURRENT
tck = min., CS = VIH(min),
active state ( max. 4 banks)
BURST OPERATING CURRENT
tck = min.,
Read command cycling
AUTO REFRESH CURRENT
tck = min.,
Auto Refresh command cycling
SELF REFRESH CURRENT
Self Refresh Mode, CKE=0.2V
Parameter & Test Condition
and at 66 MHz for -10 parts. Input signals are changed once during tck, excepts for ICC6 and for standby
currents when tck=infinity.
and BL=4 is assumed and the VDDQ current is excluded.
A
= 0 to 70
o
C, Vdd = 3.3V
tck = min.
tck = Infinity
tck = min.
tck = Infinity
CKE>=VIH(min.)
CKE<=VIL(max.)
standard version
L-version
15
0.3V
ICC2NS
ICC2PS
Symb.
ICC2N
ICC3N
ICC2P
ICC3P
ICC1
ICC4
ICC5
ICC6
64MBit Synchronous DRAM
HYB39S64400/800/160AT(L)
x16
x16
x4
x8
x4
x8
-8/-8B
100
110
130
100
130
500
35
45
60
70
2
1
5
8
1
max.
500
-10
70
75
90
30
40
40
50
70
90
2
1
5
8
1
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
A
Note
3,4
3
3
3
3
3
3
3
3
3
3