HYB39S64160AT-10 SIEMENS [Siemens Semiconductor Group], HYB39S64160AT-10 Datasheet - Page 47

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HYB39S64160AT-10

Manufacturer Part Number
HYB39S64160AT-10
Description
64 MBit Synchronous DRAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
19.2 Random Row Write (Interleaving Banks) with Precharge
DQM
Addr
CKE
RAS
CAS
CLK
BS
AP
WE
DQ
CS
High
Hi-Z
Command
Activate
Bank A
RAx
RAx
T0
t
t
CK3
RCD
T1
Command
T2
Bank A
DAx0
Write
CAX
T3
DAx1
T4
DAx2
T5
DAx3
T6
DAx4
T7
Command
Activate
Bank B
DAx5
RBx
RBx
T8
DAx6
T9
DAx7
T10
Command
Bank B
DBx0
Write
CBx
t
T11
WR
DBx1
T12
Precharge
Command
Bank A
DBx2
T13
DBx3
T14
t
RP
DBx4
T15
Command
Activate
Bank A
DBx5
RAy
RAy
T16
DBx6
Burst Length = 8, CAS Latency = 3
T17
DBx7
T18
Command
Bank A
DAy0
Write
CAy
t
T19
WR
DAy1
T20
Precharge
Command
Bank B
DAy2
T21
DAy3
T22

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