HYB39S64160AT-10 SIEMENS [Siemens Semiconductor Group], HYB39S64160AT-10 Datasheet - Page 46

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HYB39S64160AT-10

Manufacturer Part Number
HYB39S64160AT-10
Description
64 MBit Synchronous DRAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
19.1 Random Row Write (Interleaving Banks) with Precharge
DQM
Addr
CKE
RAS
CAS
CLK
BS
AP
WE
DQ
CS
High
Hi-Z
Command
Activate
Bank A
RAx
RAx
T0
t
RCD
t
CK2
Command
Command
T1
Bank A
Bank A
DAx0
Write
Write
CAy
CAX
T2
DAx1
T3
DAx2
T4
DAx3
T5
DAx4
T6
DAx5
T7
Command
Activate
Bank B
DAx6
RBx
RBx
T8
DAx7
T9
Command
t
DBx0
Bank B
WR
Write
CBx
T10
Precharge
Command
Bank A
DBx1
T11
DBx2
t
RP
T12
Command
Activate
Bank A
DBx3
RAy
RAy
T13
DBx4
T14
DBx5
T15
DBx6
T16
DBx7
Burst Length = 8, CAS Latency = 2
T17
Command
t
Bank A
DAy0
WR
Write
CAy
T18
Precharge
Command
Bank B
DAy1
T19
DAy2
T20
DAy3
T21
DAy4
T22

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