S912XET512J3VALR Freescale Semiconductor, S912XET512J3VALR Datasheet - Page 1227

• Manufacturer Part Number: S912XET512J3VALR
• Description: 16-bit Microcontrollers - MCU 16 BIT,512K FLASH
• Manufacturer: Freescale Semiconductor

Specifications of S912XET512J3VALR

• Rohs: yes
• Core: HCS12X
• Processor Series: MC9S12XE
• Data Bus Width: 16 bit
• Maximum Clock Frequency: 50 MHz
• Program Memory Size: 512 KB
• Data Ram Size: 32 KB
• On-chip Adc: Yes
• Operating Supply Voltage: 3.13 V to 5.5 V
• Operating Temperature Range: - 40 C to + 105 C
• Package / Case: LQFP-112
• Mounting Style: SMD/SMT

A.3.1.15
The maximum time for partitioning the D-flash (ERPART=16, DFPART=0) is given by :
A.3.1.16
Erase Verify D-Flash for a given number of words N
A.3.1.17
D-Flash programming time is dependent on the number of words being programmed and their location
with respect to a row boundary, because programming across a row boundary requires extra steps. The D-
Flash programming time is specified for different cases (1,2,3,4 words and 4 words across a row boundary)
at a 50MHz bus frequency. The typical programming time can be calculated using the following equation,
whereby N
crossed.
The maximum programming time can be calculated using the following equation
A.3.1.18
Typical D-Flash sector erase times are those expected on a new device, where no margin verify fails occur.
They can be calculated using the following equation.
Maximum D-Fash sector erase times can be calculated using the following equation.
The D-Flash sector erase time on a new device is ~5ms and can extend to 20ms as the flash is cycled.
Freescale Semiconductor
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t part 21800
t check
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t eradf 5025
t eradf 20100
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denotes the number of words; BC=0 if no boundary is crossed and BC=1 if a boundary is
(
Full Partition D-Flash (FCMD=0x0F)
Erase Verify D-Flash Section (FCMD=0x10)
D-Flash Programming (FCMD=0x11)
Erase D-Flash Sector (FCMD=0x12)
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MC9S12XE-Family Reference Manual Rev. 1.25
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640 N
840 N
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Appendix A Electrical Characteristics
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1227
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