MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 144
![IC DDR3 SDRAM 1GBIT 78FBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT41J256M4HX-15E:D TR
Manufacturer Part Number
MT41J256M4HX-15E:D TR
Description
IC DDR3 SDRAM 1GBIT 78FBGA
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Specifications of MT41J256M4HX-15E:D TR
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (256M x 4)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-FBGA
Organization
256Mx4
Density
1Gb
Address Bus
17b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
220mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 91: WRITE to READ (BC4 Mode Register Setting)
Command 1
DQS, DQS#
Address 3
DQ 4
CK#
CK
WRITE
Valid
T0
Notes:
NOP
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2.
3. The fixed BC4 setting is activated by MR0[1:0] = 10 during the WRITE command at T0 and the READ command at Ta0.
4. DI n = data-in for column n.
5. BC4 (fixed), WL = 5 (AL = 0, CWL = 5), RL = 5 (AL = 0, CL = 5).
t
data shown at T7.
WTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last write
NOP
T2
WL = 5
NOP
T3
NOP
T4
t WPRE
NOP
T5
DI
n
n + 1
DI
NOP
n + 2
T6
DI
n + 3
DI
t WPST
NOP
T7
Indicates A Break in
Time Scale
NOP
T8
t WTR 2
Transitioning Data
NOP
T9
Don’t Care
READ
Valid
Ta0
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