MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 53

IC DDR3 SDRAM 1GBIT 78FBGA

MT41J256M4HX-15E:D TR

Manufacturer Part Number
MT41J256M4HX-15E:D TR
Description
IC DDR3 SDRAM 1GBIT 78FBGA
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (256M x 4)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-FBGA
Organization
256Mx4
Density
1Gb
Address Bus
17b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
220mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 27:
Figure 28:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
t AONPD
Begin point: Rising edge of CK - CK#
with ODT first registered HIGH
CK
CK#
DQ, DM
DQS, DQS#
TDQS, TDQS#
CK
CK#
DQ, DM
DQS, DQS#
TDQS, TDQS#
Begin point: Rising edge of CK - CK#
defined by the end point of ODTL
t
t
AONPD and
ADC Definition
V
RTT
End point:
Extrapolated
point at V
V
_
SS
NOM
t
Q
AOFPD Definition
RTT
_
NOM
CNW
T
SW
t AONPD
t ADC
1
T
End point: Extrapolated point at V
SW
T
SW
2
V
T
21
CK
CK#
SW
SW
1
11
Begin point: Rising edge of CK - CK# defined by
the end point of ODTL
V
t AOFPD
Begin point: Rising edge of CK - CK#
with ODT first registered LOW
SW
1
V
SW
2
53
V
V
SW
RTT
2
_
WR
V
SW
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CWN
SS
2
Q
4 or ODTL
End point: Extrapolated point at V
t ADC
V
SW
1Gb: x4, x8, x16 DDR3 SDRAM
T
SW
CWN
1
t AOFPD
12
T
End point: Extrapolated point at V
T
8
SW
SW
T
2
22
SW
1
©2006 Micron Technology, Inc. All rights reserved.
ODT Characteristics
V
V
RTT
RTT
_
_
NOM
NOM
RTT
V
V
V
DD
DD
SS
_
WR
Q/2
Q
Q/2
V
RTT
SS
Q
_
NOM

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