MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 57

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 41:
Alternative 40Ω Driver
Table 42:
40Ω Driver Output Sensitivity
Table 43:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
MR1[5,1]
R
R
R
Pull-up/pull-down mismatch (MM
ON
ON
ON
0,0
@ 0.8 × V
@ 0.5 × V
@ 0.2 × V
Symbol
34Ω Output Driver Voltage and Temperature Sensitivity
40Ω Driver Impedance Characteristics
40Ω Output Driver Sensitivity Definition
DD
DD
DD
R
40Ω
ON
Q
Q
Q
Notes:
Notes:
0.9 - dR
0.9 - dR
0.9 - dR
1. Tolerance limits assume RZQ of 240Ω (±1 percent) and are applicable after proper ZQ cali-
2. Measurement definition for mismatch between pull-up and pull-down (MM
If either the temperature or the voltage changes after I/O calibration, the tolerance limits
listed in Table 42 can be expected to widen according to Table 43 and Table 44 on
page 58.
1. ΔT = T - T(@ calibration), ΔV = V
Resistor
R
R
bration has been performed at a stable temperature and voltage (V
Refer to "40W Driver Output Sensitivity" on page 57 if either the temperature or the volt-
age changes after calibration.
both R
ON 40PD
ON 40PU
ON
ON
ON
dR
dR
dR
dR
dR
dR
PUPD
dTM × |ΔT| - dR
Change
MM
dTH × |ΔT| - dR
dTL × |ΔT| - dR
ON
ON
ON
ON
ON PU
ON
ON
)
dVM
dTM
dVH
dTH
dVL
dTL
P UP D
Min
and R
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
0.5 × V
V
=
ON PD
OUT
ON
ON
ON
R
------------------------------------ -
DD
DD
DD
DD
DD
DD
DD
ON
dVH × |ΔV|
dVM × |ΔV|
dVL × |ΔV|
R
Q
Q
Q
Q
Q
Q
Q
at 0.5 × V
ON
P U
–
Nom
57
Min
R
–10%
DD
0
Min
0
0
0
0
0
0.6
0.9
0.9
0.9
0.9
0.6
ON
DD
Q - V
Q:
P D
x
1.1 + dR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.1 + dR
DD
100
1.1 + dR
Q(@ calibration), and V
Nom
ON
n/a
1.0
1.0
1.0
1.0
1.0
1.0
ON
ON
1Gb: x4, x8, x16 DDR3 SDRAM
dTM × |ΔT| + dR
dTH × |ΔT| + dR
dTL × |ΔT| + dR
Max
0.13
0.13
0.13
1.5
1.5
1.5
Output Driver Impedance
Max
Max
1.1
1.1
1.4
1.4
1.1
1.1
10
©2006 Micron Technology, Inc. All rights reserved.
ON
ON
ON
DD
dVH × |ΔV|
dVM × |ΔV|
dVL × |ΔV|
DD
= V
Q = V
DD
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
Units
Q.
%
DD
PUPD
%/mV
%/mV
%/mV
Units
%/°C
%/°C
%/°C
, V
). Measure
SS
Q = V
RZQ/6
RZQ/6
RZQ/6
Units
Notes
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
SS
).