HD6417750RF240DV Renesas Electronics America, HD6417750RF240DV Datasheet - Page 20

MPU 3V 16K I-TEMP,PB-FREE 208-QF

HD6417750RF240DV

Manufacturer Part Number
HD6417750RF240DV
Description
MPU 3V 16K I-TEMP,PB-FREE 208-QF
Manufacturer
Renesas Electronics America
Series
SuperH® SH7750r
Datasheet

Specifications of HD6417750RF240DV

Core Processor
SH-4
Core Size
32-Bit
Speed
240MHz
Connectivity
EBI/EMI, FIFO, SCI, SmartCard
Peripherals
DMA, POR, WDT
Number Of I /o
28
Program Memory Type
ROMless
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
1.4 V ~ 1.6 V
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
208-QFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD6417750RF240DV
Manufacturer:
HITACHI
Quantity:
7 287
Rev.7.00 Oct. 10, 2008 Page xviii of lxxxiv
REJ09B0366-0700
Item
13.2.8 Memory Control
Register (MCR)
Bit 31—RAS Down
(RASD):
Bits 29 to 27—RAS
Precharge Time at End
of Refresh (TRC2–
TRC0)
Bits 21 to 19—RAS
Precharge Period
(TPC2–TPC0):
Bits 15 to 13—Write
Precharge Delay
(TRWL2–TRWL0):
Bits 12 to 10—CAS-
Before-RAS Refresh
RAS Assertion Period
(TRAS2–TRAS0):
Page
402
402
403
404
405
Revision (See Manual for Details)
Description and table amended
Do not set RAS down mode in slave mode or partial-sharing
mode, or when areas 2 and 3 are both designated as
synchronous DRAM interface. See Connecting a 128-Mbit/256-
Mbit Synchronous DRAM with 64-bit Bus Width (SH7750R
Only): in section 13.3.5, Synchronous DRAM Interface.
Bit 31: RASD
0
Note added
Note: For setting values and the period during which no
Description amended and note added
When the DRAM interface is selected, these bits specify the
minimum number of cycles until RAS is asserted again after
being negated. When the synchronous DRAM interface is
selected, these bits specify the minimum number of cycles until
the next bank active command
Note: For setting values and the period during which no
Description amended and note added
After a write cycle, the next active command is not issued for a
period equivalent to the
TRWL[2:0] bits.* ...
Note: * For setting values and the period during which no
Description amended and note added
When the DRAM interface is set, these bits set the RAS
assertion period in CAS-before-RAS refreshing. When the
synchronous DRAM interface is set, the bank active command
is not issued for the period set by the TRC[2:0]* and TRAS[2:0]
bits after an auto-refresh command is issued.
Note: For setting values and the period during which no
command is issued, see 22.3.3, Bus Timing.
command is issued, see 22.3.3, Bus Timing.
command is issued, see 22.3.3, Bus Timing.
command is issued, see 22.3.3, Bus Timing.
Description
Auto-precharge mode
setting values of the TPC[2:0] and
after precharging.
(Initial value)

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