MC68HC916Y3CFT16 Freescale Semiconductor, MC68HC916Y3CFT16 Datasheet - Page 196

• Manufacturer Part Number: MC68HC916Y3CFT16
• Description: IC MCU 96K FLASH 16MHZ 160-QFP
• Manufacturer: Freescale Semiconductor
• Series: HC16r

Specifications of MC68HC916Y3CFT16

• Core Processor: CPU16
• Core Size: 16-Bit
• Speed: 16MHz
• Connectivity: EBI/EMI, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 60
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 160-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

8.3.5 Programming
8-4
MOTOROLA
The following paragraphs give step-by-step procedures for programming and erasure
of flash EEPROM arrays. Refer to APPENDIX A ELECTRICAL CHARACTERISTICS
for information on programming and erasing specifications for the flash EEPROM
module.
The following steps are used to program a flash EEPROM array. Figure 8-1 is a flow-
chart of the programming operation. Figures A-36 and A-37 in APPENDIX A ELEC-
TRICAL CHARACTERISTICS for V
1. Increase voltage applied to the V
2. Clear the ERAS bit and set the LAT bit in FEExCTL. This enables the program-
3. Write data to the address to be programmed. This latches the address to be
4. Set the ENPE bit in FEExCTL. This starts the program pulse.
5. Delay the proper amount of time for one programming pulse to take place. De-
6. Clear the ENPE bit in FEExCTL. This stops the program pulse.
7. Delay while high voltage to array is turned off. Delay is specified by parameter
8. Read the address to verify that it has been programmed.
9. If the location is not programmed, repeat steps 4 through 7 until the location is
10. If the location is programmed, repeat the same number of pulses as required to
11. Read the address to verify that it remains programmed.
12. Clear the LAT bit in FEExCTL. This disables the programming address and
13. If more locations are to be programmed, repeat steps 2 through 10.
14. Reduce voltage applied to the V
ming address and data latches.
programmed and the programming data.
lay is specified by parameter pw
t
programmed, or until the specified maximum number of program pulses has
been reached. Maximum number of pulses is specified by parameter n
program the location. This provides 100% program margin.
data latches.
pr
.
FLASH EEPROM MODULE
FPE
FPE
pp
FPE
to V
.
pin to normal read level.
pin to program/erase/verify level.
DD
relationships during programming.
MC68HC16Y3/916Y3
USER’S MANUAL
pp
.