AT91SAM7S256C-MU Atmel, AT91SAM7S256C-MU Datasheet - Page 556

• Manufacturer Part Number: AT91SAM7S256C-MU
• Description: IC ARM7 MCU 32BIT 256K 64-QFN
• Manufacturer: Atmel
• Series: AT91SAMr

Specifications of AT91SAM7S256C-MU

• Core Processor: ARM7
• Core Size: 16/32-Bit
• Speed: 55MHz
• Connectivity: I²C, SPI, SSC, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
• Number Of I /o: 32
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 1.95 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-VQFN Exposed Pad, 64-HVQFN, 64-SQFN, 64-DHVQFN
• Processor Series: AT91
• Core: ARM7TDMI
• Data Bus Width: 32 bit
• Data Ram Size: 64 KB
• Interface Type: SPI, TWI, USART, USB
• Maximum Clock Frequency: 55 MHz
• Number Of Programmable I/os: 32
• Number Of Timers: 5
• Operating Supply Voltage: 3.3 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Temperature Range: - 40 C to + 85 C
• For Use With: AT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9AT91SAM7S-EK - KIT EVAL FOR ARM AT91SAM7S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: AT91SAM7S256-MU; AT91SAM7S256-MU

Table 37-4.
Table 37-5.
Table 37-6.
556
Symbol
V
V
I
T
Symbol
T
I
I
Symbol
T
I
I
DD
SB
CC
SB
CC
START
PU
PU
BOT-
HYST
AT91SAM7S Series Preliminary
Parameter
Threshold Level
Hysteresis
Current Consumption
Startup Time
Brownout Detector Characteristics
DC Flash Characteristics AT91SAM7S64/321/32/161/16
DC Flash Characteristics AT91SAM7S512/256/128
Parameter
Power-up delay
Standby current
Active current
Parameter
Power-up delay
Standby current
Active current
Conditions
Falling edge
V
BOD on (GPNVM0 bit active)
BOD off (GPNVM0 bit inactive)
Conditions
@25°C
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
@85°C
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
Random Read @ 30MHz
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
Write
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
Conditions
@25°C
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
@85°C
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
Random Read @ 30MHz
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
Write
(one bank for AT91SAM7S512)
onto VDDCORE = 1.8V
onto VDDFLASH = 3.3V
HYST
= V
BOT+
- V
BOT-
Min
Min
1.65
Min
1.68
Typ
100
50
12
Max
Max
400
120
400
3.0
0.4
2.2
3.0
0.8
5.5
45
10
30
45
10
10
4
7
5
6175K–ATARM–30-Aug-10
Max
1.71
200
65
18
1
Units
Units
mA
mA
mA
mA
Units
µS
µA
µA
µA
µS
µA
µA
µA
mV
µA
µA
µs
V