DE475-102N21A IXYS RF, DE475-102N21A Datasheet

RF MOSFET, N CHANNEL, 1KV, DE-475

DE475-102N21A

Manufacturer Part Number
DE475-102N21A
Description
RF MOSFET, N CHANNEL, 1KV, DE-475
Manufacturer
IXYS RF
Datasheet

Specifications of DE475-102N21A

Drain Source Voltage Vds
1kV
Continuous Drain Current Id
24A
Power Dissipation Pd
1.8kW
Operating Temperature Range
-55°C To +175°C
Rf Transistor Case
475
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DE475-102N21A
Manufacturer:
TRACO
Quantity:
200
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
P
P
R
R
Symbol
V
V
I
I
R
g
T
T
T
T
Weight
D25
DM
AR
GSS
DSS
fs
J
JM
stg
L
DSS
DGR
GS
GSM
AR
DC
DHS
DAMB
DSS
GS(th)
thJC
thJHS
DS(on)
N-Channel Enhancement Mode
Low Q
High dv/dt
Nanosecond Switching
30MHz Maximum Frequency
g
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
I
T
Derate 4.0W/°C above 25°C
T
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
V
1.6mm (0.063 in) from case for 10 s
S
S
and R
J
J
c
c
c
c
c
c
j
GS
DS
GS
DS
GS
GS
DS
≤ I
≤ 150°C, R
= 0
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 25°C
= V
= 0.8 V
= 15 V, I
= 0 V, I
= ±20 V
= 0
= 15 V, I
DM
, di/dt ≤  1 00A/µs, V
GS
, I
g
D
DSS
D
DC
D
D
= 3 ma
= 4 ma
G
, V
= 0.5I
= 0.5I
T
T
= 0.2Ω
J
J
DS
= 125°C
= 25°C
= 0
D25
D25
GS
, pulse test
= 1 MΩ
DD
≤ V
DSS
JM
,
Characteristic Values
T
J
= 25°C unless otherwise specified
1000
min.
-55
-55
2.5
Maximum Ratings
typ.
175
300
27
3
>200
1000
1000
1800
0.08
0.20
±20
±30
144
730
4.5
24
21
30
max.
+175
+175
±100
0.41
5
5.5
50
1
V/ns
V/ns
C/W
C/W
mJ
W
W
W
mA
V
V
V
V
A
A
A
µA
nA
°C
°C
°C
°C
RF Power MOSFET
V
V
S
g
DE475-102N21A
GATE
Features
Advantages
SG1
Isolated Substrate
IXYS advanced low Q
Low gate charge and capacitances
Low R
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other haz-
ardous materials
Optimized for RF and high speed
switching at frequencies to 30MHz
Easy to mount—no insulators needed
High power density
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
easier to drive
faster switching
V
I
R
P
D25
SG2
DS(on)
DSS
DC
DS(on)
=
=
=
=
g
process
SD1
1000 V
1800W
0.41 Ω
SD2
24 A
DRAIN

Related parts for DE475-102N21A

DE475-102N21A Summary of contents

Page 1

... Weight Maximum Ratings 1000 1000 = 1 MΩ ±20 ±30 144 JM ≤ DSS >200 1800 730 4.5 0.08 0.20 Characteristic Values T = 25°C unless otherwise specified J min. typ. 1000 2.5 27 -55 175 -55 300 3 DE475-102N21A RF Power MOSFET V = DSS I = D25 R = DS(on V/ns V/ GATE W C/W ...

Page 2

... Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. max. 0.3 5500 , 200 160 35 77 Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. max. 21 144 JM 1.5 200 0.6 8 4,891,686 4,931,844 5,017,508 5,187,117 5,237,481 5,486,715 DE475-102N21A RF Power MOSFET Ω µC A ...

Page 3

... Vds in Volts 475-102N21A Capacitances vs Vds DE475-102N21A RF Power MOSFET Ciss Coss Crss 700 800 900 1000 ...

Page 4

... D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS (Preliminary) of the device, Rds is the resistive leakage term. DE475-102N21A RF Power MOSFET are mod- RSS Doc #9200-0247 Rev 4 © 2003 IXYS RF ...

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