DE475-102N21A IXYS RF, DE475-102N21A Datasheet - Page 2

• Manufacturer Part Number: DE475-102N21A
• Description: RF MOSFET, N CHANNEL, 1KV, DE-475
• Manufacturer: IXYS RF

Specifications of DE475-102N21A

• Drain Source Voltage Vds: 1kV
• Continuous Drain Current Id: 24A
• Power Dissipation Pd: 1.8kW
• Operating Temperature Range: -55°C To +175°C
• Rf Transistor Case: 475
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
Symbol
R
C
C
C
C
T
T
T
T
Q
Q
Q
Source-Drain Diode
Symbol
I
I
V
T
Q
I
For detailed device mounting and installation instructions, see the “DE-
Series MOSFET Mounting Instructions” technical note on IXYS RF’s web
site at www.ixysrf.com/Technical_Support/App_notes.html
4,835,592
5,034,796
5,381,025
S
SM
RM
d(on)
on
d(off)
off
rr
SD
G
iss
oss
rss
stray
g(on)
gs
gd
RM
Test Conditions
V
f = 1 MHz
Back Metal to any Pin
V
I
R
V
I
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
I
V
D
D
F
F
4,850,072
5,049,961
5,640,045
GS
GS
GS
GS
R
G
= I
= I
= 0.5 I
= 0.5 I
= 100V
= 0.2 Ω (External)
= 0 V, V
= 15 V, V
= 10 V, V
= 0 V
S
S
, V
, -di/dt = 100A/µs,
GS
DM
D25
= 0 V,
DS
DS
DS
= 0.8 V
4,881,106
5,063,307
= 0.8 V
= 0.5 V
DSS(max)
DSS
DSS
,
4,891,686
5,187,117
JM
Characteristic Values
(
Characteristic Values
(
T
T
J
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
min.
min.
4,931,844
5,237,481
5500
typ.
typ.
200
160
200
0.3
0.6
60
46
35
77
5
5
5
8
8
5,017,508
5,486,715
max.
max.
144
1.5
21
µC
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
ns
Ω
A
A
V
A
RF Power MOSFET
DE475-102N21A