DE475-102N21A IXYS RF, DE475-102N21A Datasheet - Page 4

• Manufacturer Part Number: DE475-102N21A
• Description: RF MOSFET, N CHANNEL, 1KV, DE-475
• Manufacturer: IXYS RF

Specifications of DE475-102N21A

• Drain Source Voltage Vds: 1kV
• Continuous Drain Current Id: 24A
• Power Dissipation Pd: 1.8kW
• Operating Temperature Range: -55°C To +175°C
• Rf Transistor Case: 475
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

102N21A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expan-
sion of the SPICE level 3 MOSFET model. It includes the stray inductive terms
L
The output capacitance, C
eled with reversed biased diodes. This provides a varactor type response neces-
sary for a high power device model. The turn on delay and the turn off delay are
adjusted via Ron and Roff.
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
.SUBCKT 102N21A 10 20 30
* TERMINALS: D G S
* 1000 Volt 21 Amp 0.41 ohm N-Channel Power MOSFET
* REV.A 01-09-02
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.3
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 5.5N
RD
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
G
, L
S
3 30 .5N
4 1 0.41
and L
D
. Rd is the R
Figure 1 DE-SERIES SPICE Model
DS(ON)
OSS
, and reverse transfer capacitance, C
of the device, Rds is the resistive leakage term.
(Preliminary)
RSS
are mod-
RF Power MOSFET
DE475-102N21A
An
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: [phone]
Email: [e-mail]
Web: http://www.directedenergy.com
Doc #9200-0247 Rev 4
© 2003 IXYS RF
IXYS Company