FGB30N6S2 Fairchild Semiconductor, FGB30N6S2 Datasheet - Page 2

• Manufacturer Part Number: FGB30N6S2
• Description: IGBT N-CH SMPS 600V 45A TO263AB
• Manufacturer: Fairchild Semiconductor

Specifications of FGB30N6S2

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 12A
• Current - Collector (ic) (max): 45A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: FGB30N6S2_NL; FGB30N6S2_NL

©2003 Fairchild Semiconductor Corporation
Package Marking and Ordering Information
Electrical Characteristics
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
NOTE:
V
Symbol
2.
of the IGBT only. E
as the IGBT. The diode type is specified in figure 20.
3.
the input pulse and ending at the point where the collector current equals zero (I
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
V
Device Marking
Q
BV
BV
t
t
SSOA
t
t
CE(SAT)
d(OFF)I
d(OFF)I
V
E
E
E
E
E
E
GE(TH)
d(ON)I
d(ON)I
R
I
I
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
Turn-Off Energy Loss (E
G(ON)
CES
GES
GEP
ON1
ON2
ON1
ON2
OFF
OFF
t
t
t
t
CES
ECS
rI
fI
rI
fI
JC
30N6S2
30N6S2
30N6S2
30N6S2
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate Charge
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
Switching SOA
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Thermal Resistance Junction-Case
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
FGB30N6S2T
Parameter
OFF
FGH30N6S2
FGP30N6S2
FGB30N6S2
Device
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
T
J
= 25°C unless otherwise noted
TO-220AB
TO-263AB
TO-263AB
Package
TO-247
T
15V, L = 100 H, V
IGBT and Diode at T
I
V
V
R
L = 200 H
Test Circuit - Figure 20
IGBT and Diode at T
I
V
V
R
L = 200 H
Test Circuit - Figure 20
CE
CE
I
I
V
V
I
V
I
V
I
I
J
GE
GE
CE
G
CE
G
C
C
C
C
C
C
CE
GE
GE
CE
= 150°C, R
= 250 A, V
= -10mA, V
= 12A,
= 12A,
= 250 A, V
= 12A, V
= 12A,
= 12A,
= 10
= 10
= 390V,
= 15V,
= 390V,
= 15V,
= 15V
= 600V
= ± 20V
= 300V
Test Conditions
CE
G
GE
CE
GE
= 300V
= 10
T
T
V
V
Reel Size
T
T
= 600V
CE
= 0
= 0
J
J
GE
GE
330mm
J
J
= 25°C
= 125°C
Tube
Tube
Tube
= 25°C
= 125°C
J
J
= 600V
= 15V
= 20V
= 25°C,
= 125°C
V
GE
=
CE
Min
600
= 0A). All devices were tested per
3.5
20
-
-
-
-
-
-
-
-
60
Tape Width
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24mm
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
N/A
N/A
N/A
Typ
2.0
1.7
4.3
6.5
23
26
110
100
160
250
-
-
-
-
-
10
40
53
55
11
17
73
90
55
6
-
-
ON1
is the turn-on loss
±250
Max
100
0.75
2.5
2.0
5.0
8.0
150
100
100
200
350
29
33
2
-
-
-
-
-
-
-
-
-
-
-
-
800 Units
Quantity
30 Units
50 Units
50 Units
Units
°C/W
mA
nA
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
V
A
A
J
J
J
J
J
J
J