FGB30N6S2 Fairchild Semiconductor, FGB30N6S2 Datasheet - Page 7

• Manufacturer Part Number: FGB30N6S2
• Description: IGBT N-CH SMPS 600V 45A TO263AB
• Manufacturer: Fairchild Semiconductor

Specifications of FGB30N6S2

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 12A
• Current - Collector (ic) (max): 45A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: FGB30N6S2_NL; FGB30N6S2_NL

©2003 Fairchild Semiconductor Corporation
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic
discharge of energy through the devices. When
handling these devices, care should be exercised to
assure that the static charge built in the handler’s
body capacitance is not discharged through the
device. With proper handling and application
procedures, however, IGBTs are currently being
extensively used in production by numerous
equipment manufacturers in military, industrial and
consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can
be handled safely if the following basic precautions
are taken:
1. Prior to assembly into a circuit, all leads should be
2. When devices are removed by hand from their
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
5. Gate Voltage Rating - Never exceed the gate-
6. Gate Termination - The gates of these devices
7. Gate Protection - These devices do not have an
kept shorted together either by the use of metal
shorting springs or by the insertion into conduc-
tive material such as “ECCOSORBD™ LD26” or
equivalent.
carriers, the hand being used should be
grounded by any suitable means - for example,
with a metallic wristband.
from circuits with power on.
voltage rating of V
can result in permanent damage to the oxide
layer in the gate region.
are essentially capacitors. Circuits that leave the
gate open-circuited or floating should be avoided.
These conditions can result in turn-on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
GEM
. Exceeding the rated V
GE
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating
device performance for a specific application. Other
typical frequency vs collector current (I
possible using the information shown for a typical
unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows
f
The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
Deadtime (the denominator) has been arbitrarily held
to 10% of the on-state time for a 50% duty factor.
Other definitions are possible. t
defined in Figure 21. Device turn-off delay can
establish an additional frequency limiting condition
for an application other than T
when controlling output ripple under a lightly loaded
condition.
f
The allowable dissipation (P
P
and conduction losses must not exceed P
duty factor was used (Figure 3) and the conduction
losses (P
E
waveforms shown in Figure 21. E
of the instantaneous power loss (I
turn-on and E
power loss (I
are included in the calculation for E
collector current equals zero (I
MAX1
MAX1
MAX2
D
ON2
= (T
is defined by f
and E
or f
is defined by f
JM
C
MAX2
- T
) are approximated by P
OFF
C
CE
OFF
)/R
; whichever is smaller at each point.
are defined in the switching
x V
JC
is the integral of the instantaneous
MAX2
CE
. The sum of device switching
MAX1
) during turn-off. All tail losses
= (P
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
= 0.05/(t
D
) is defined by
D
JM
- P
CE
d(OFF)I
. t
C
ON2
= 0)
d(OFF)I
CE
d(OFF)I
)/(E
C
OFF
x V
= (V
is the integral
and t
OFF
CE
; i.e., the
CE
+ t
is important
) plots are
CE
+ E
D
) during
d(ON)I
d(ON)I
. A 50%
x I
ON2
CE
).
are
).
)/2.