FGB30N6S2

Manufacturer Part NumberFGB30N6S2
DescriptionIGBT N-CH SMPS 600V 45A TO263AB
ManufacturerFairchild Semiconductor
FGB30N6S2 datasheets

Availability: In stock

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

Select quantity

 

Specifications of FGB30N6S2

Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.5V @ 15V, 12A
Current - Collector (ic) (max)45APower - Max167W
Input TypeStandardMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Igbt Type-Other namesFGB30N6S2_NL
FGB30N6S2_NL
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (174Kb)Embed
Next
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-
ing the fast switching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capa-
bility (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These de-
vices are ideally suited for high voltage switched mode pow-
er supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
Formerly Developmental Type TA49367.
Package
TO-247
E
C
G
COLLECTOR
(Back-Metal)
Device Maximum Ratings
Symbol
BV
Collector to Emitter Breakdown Voltage
CES
I
Collector Current Continuous, T
C25
I
Collector Current Continuous, T
C110
I
Collector Current Pulsed (Note 1)
CM
V
Gate to Emitter Voltage Continuous
GES
V
Gate to Emitter Voltage Pulsed
GEM
SSOA
Switching Safe Operating Area at T
E
Pulsed Avalanche Energy, I
AS
P
Power Dissipation Total T
D
Power Dissipation Derating T
T
Operating Junction Temperature Range
J
T
Storage Junction Temperature Range
STG
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
Features
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125
• Low Gate Charge . . . . . . . . . 23nC at V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
E
TO-220AB
C
TO-263AB
G
G
E
T
= 25°C unless otherwise noted
C
Parameter
= 25°C
C
= 110°C
C
= 150°C, Figure 2
J
= 20A, L = 1.3mH, V
= 50V
CE
DD
= 25°C
C
> 25°C
C
August 2003
o
C
= 15V
GE
Symbol
C
G
E
COLLECTOR
(Flange)
Ratings
Units
600
V
45
A
20
A
108
A
±20
V
±30
V
60A at 600V
150
mJ
167
W
1.33
W/°C
-55 to 150
°C
-55 to 150
°C
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1

Related parts for FGB30N6S2

Part Number DescriptionManufacturer Datasheet
  FGB30N6S2D IGBT N-CH SMPS 600V 45A TO263AB Fairchild Semiconductor
FGB30N6S2T  FGB30N6S2T IGBT N-CH SMPS 600V 45A TO263AB Fairchild Semiconductor
  FGB30N6S2DT IGBT N-CH SMPS 600V 45A TO263AB Fairchild Semiconductor
FGB3040CS  FGB3040CS IGBT ECOSPARK N-CH 400V TO263-6 Fairchild Semiconductor
  FGB20N6S2D IGBT N-CH SMPS 600V 28A TO263AB Fairchild Semiconductor
FGB20N6S2  FGB20N6S2 IGBT N-CH SMPS 600V 28A TO263AB Fairchild Semiconductor
FGB40N6S2T  FGB40N6S2T IGBT N-CH SMPS 600V 75A TO263AB Fairchild Semiconductor
  FGB40N6S2 IGBT N-CH SMPS 600V 75A TO263AB Fairchild Semiconductor
  FGB20N60SF IGBT 600V 20A D2PAK Fairchild Semiconductor
  FGB3236_F085 IGBT N-CH IGNITION 360V D2PAK Fairchild Semiconductor
FGB40N6S2_NL  FGB40N6S2_NL Fairchild Semiconductor
  SM2G50US60 Fairchild Semiconductor [IGBT MODULE] Fairchild Semiconductor
FTP5027RTU  FTP5027RTU Discrete Semiconductor Modules Fairchild Semiconductor
FTP5021OTU  FTP5021OTU Discrete Semiconductor Modules Fairchild Semiconductor
  FDMS86300DC Fairchild Semiconductor

FGB30N6S2 Summary of contents

  • Page 1

    ... C = 110° 150°C, Figure 20A 1.3mH 50V 25°C C > 25°C C August 2003 15V GE Symbol COLLECTOR (Flange) Ratings Units 600 108 A ±20 V ±30 V 60A at 600V 150 mJ 167 W 1.33 W/°C -55 to 150 °C -55 to 150 °C FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1 ...

  • Page 2

    ... Package Marking and Ordering Information Device Marking Device 30N6S2 FGH30N6S2 30N6S2 FGP30N6S2 30N6S2 FGB30N6S2 30N6S2 FGB30N6S2T Electrical Characteristics Symbol Parameter Off State Characteristics BV Collector to Emitter Breakdown Voltage CES BV Emitter to Collector Breakdown Voltage ECS I Collector to Emitter Leakage Current CES I Gate to Emitter Leakage Current ...

  • Page 3

    ... Figure 3. Operating Frequency vs Collector to Emitter Current 18 DUTY CYCLE < 0.5 10V GE 16 PULSE DURATION = 250 150 0.50 0.75 1.00 1.25 1. COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 5. Collector to Emitter On-State Voltage ©2003 Fairchild Semiconductor Corporation 100 125 150 Figure 2. Minimum Switching Safe Operating Area 15V ...

  • Page 4

    ... COLLECTOR TO EMITTER CURRENT (A) CE Figure 9. Turn-On Delay Time vs Collector to Emitter Current 500 390V COLLECTOR TO EMITTER CURRENT (A) CE Figure 11. Turn-Off Delay Time vs Collector to Emitter Current ©2003 Fairchild Semiconductor Corporation (Continued) 600 500 400 300 200 10V 15V GE GE 100 Figure 8. Turn-Off Energy Loss vs Collector 125 ...

  • Page 5

    ... T , CASE TEMPERATURE ( C Figure 15. Total Switching Loss vs Case Temperature 1.4 FREQUENCY = 1MHz 1.2 1.0 0.8 C IES 0.6 0.4 C OES 0.2 C RES 0 COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 17. Capacitance vs Collector to Emitter Voltage ©2003 Fairchild Semiconductor Corporation (Continued 15V 24A 12A CE I ...

  • Page 6

    ... SINGLE PULSE - Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case Test Circuit and Waveforms L = 200mH FGP30N6S2 Figure 20. Inductive Switching Test Circuit ©2003 Fairchild Semiconductor Corporation (Continued RECTANGULAR PULSE DURATION (s) 1 FGP30N6S2D DIODE TA49390 390V d(OFF Figure 21. Switching Test Waveforms ...

  • Page 7

    ... Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2003 Fairchild Semiconductor Corporation Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other ...

  • Page 8

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

Related keywords:

  • fgb30n6s2
  • fgb30n6s2d
  • fgb3040cs
  • FGB30N6S2 datasheet
  • FGB30N6S2 data sheet
  • FGB30N6S2 pdf datasheet
  • FGB30N6S2 component
  • FGB30N6S2 part
  • FGB30N6S2 distributor
  • FGB30N6S2 RoHS
  • FGB30N6S2 datasheet download