FGB30N6S2 Fairchild Semiconductor, FGB30N6S2 Datasheet - Page 5

• Manufacturer Part Number: FGB30N6S2
• Description: IGBT N-CH SMPS 600V 45A TO263AB
• Manufacturer: Fairchild Semiconductor

Specifications of FGB30N6S2

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 12A
• Current - Collector (ic) (max): 45A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: FGB30N6S2_NL; FGB30N6S2_NL

©2003 Fairchild Semiconductor Corporation
Typical Performance Curves
Figure 17. Capacitance vs Collector to Emitter
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
175
150
125
100
1.2
1.0
0.8
0.6
0.4
0.2
Figure 15. Total Switching Loss vs Case
75
50
25
0
0
0
5
25
FREQUENCY = 1MHz
R
Figure 13. Transfer Characteristic
E
T
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
G
TOTAL
J
10
= 125
= 10 , L = 500 H, V
6
C
RES
= E
o
C
7
20
V
50
ON2
C
V
CE
OES
GE
T
, COLLECTOR TO EMITTER VOLTAGE (V)
J
8
+ E
, GATE TO EMITTER VOLTAGE (V)
= -55
30
Temperature
T
C
OFF
C
IES
o
, CASE TEMPERATURE (
9
Voltage
C
40
CE
75
CE
10
= 390V, V
= 10V
50
11
100
60
GE
12
= 15V
70
T
o
13
J
C)
= 25
(Continued)
125
80
o
14
C
I
I
CE
CE
I
CE
= 24A
= 12A
= 6A
90
15
150
16
100
Figure 18. Collector to Emitter On-State Voltage vs
0.1
10
3.5
3.0
2.5
2.0
1.5
1
Figure 16. Total Switching Loss vs Gate
16
14
12
10
8
6
4
2
0
1.0
6
0
T
E
I
I
CE
CE
J
I
TOTAL
CE
I
G(REF)
= 125
= 24A
= 12A
2
= 6A
7
= E
o
Figure 14. Gate Charge
Gate to Emitter Voltage
= 1mA, R
4
C, L = 500 H, V
ON2
8
V
V
CE
V
CE
6
+ E
GE
= 600V
= 200V
9
, GATE TO EMITTER VOLTAGE (V)
Q
Resistance
OFF
L
R
10
8
I
I
G
G
CE
I
CE
= 25 , T
CE
, GATE RESISTANCE ( )
, GATE CHARGE (nC)
= 12A
= 24A
10
= 6A
10
CE
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
= 390V, V
J
12
11
= 25
14
o
C
12
V
GE
CE
16
100
= 15V
= 400V
13
18
14
20
CE
= 10V
22
15
24
1000
16