FGB30N6S2 Fairchild Semiconductor, FGB30N6S2 Datasheet - Page 6

• Manufacturer Part Number: FGB30N6S2
• Description: IGBT N-CH SMPS 600V 45A TO263AB
• Manufacturer: Fairchild Semiconductor

Specifications of FGB30N6S2

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 12A
• Current - Collector (ic) (max): 45A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: FGB30N6S2_NL; FGB30N6S2_NL

©2003 Fairchild Semiconductor Corporation
Typical Performance Curves
Test Circuit and Waveforms
Figure 20. Inductive Switching Test Circuit
10
10
10
-1
-2
0
10
R
G
0.20
-5
0.50
0.10
0.05
0.02
0.01
= 10
FGP30N6S2
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
SINGLE PULSE
10
-4
L = 200mH
+
-
FGP30N6S2D
10
V
DIODE TA49390
(Continued)
t
DD
1
-3
, RECTANGULAR PULSE DURATION (s)
= 390V
10
V
V
I
CE
-2
GE
CE
Figure 21. Switching Test Waveforms
t
d(OFF)I
90%
DUTY FACTOR, D = t
PEAK T
10
10%
-1
t
fI
J
P
= (P
D
E
OFF
D
90%
X Z
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
t
1
t
JC
2
1
E
X R
ON2
/ t
10
2
10%
0
JC
t
d(ON)I
) + T
t
rI
C
10
1