FGB30N6S2 Fairchild Semiconductor, FGB30N6S2 Datasheet - Page 3

• Manufacturer Part Number: FGB30N6S2
• Description: IGBT N-CH SMPS 600V 45A TO263AB
• Manufacturer: Fairchild Semiconductor

Specifications of FGB30N6S2

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 12A
• Current - Collector (ic) (max): 45A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: FGB30N6S2_NL; FGB30N6S2_NL

©2003 Fairchild Semiconductor Corporation
Typical Performance Curves
Figure 5. Collector to Emitter On-State Voltage
Figure 3. Operating Frequency vs Collector to
1000
100
50
40
30
20
10
18
16
14
12
10
10
Figure 1. DC Collector Current vs Case
8
6
4
2
0
0
0.50
25
1
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
T
P
f
f
R
MAX1
MAX2
J
C
ØJC
= 125
= CONDUCTION DISSIPATION
0.75
= 0.49
= 0.05 / (t
= (P
(DUTY FACTOR = 50%)
o
C, R
50
D
V
I
CE
- P
o
CE
C/W, SEE NOTES
G
, COLLECTOR TO EMITTER CURRENT (A)
C
, COLLECTOR TO EMITTER VOLTAGE (V)
= 3 , L = 200 H, V
Emitter Current
d(OFF)I
1.00
) / (E
T
Temperature
C
, CASE TEMPERATURE (
ON2
+ t
GE
T
J
+ E
75
d(ON)I
= 10V
= 150
V
1.25
GE
OFF
= 10V
)
o
)
C
CE
= 390V
1.50
100
T
J
o
10
V
= 25
C)
GE
1.75
= 15V
o
C
125
T
2.00
J
= 125
20
75
T
C
o
C
o
C
2.25
150
30
Figure 2. Minimum Switching Safe Operating Area
Figure 6. Collector to Emitter On-State Voltage
70
60
50
40
30
20
10
12
10
18
16
14
12
10
0
8
6
4
2
0
8
6
4
2
Figure 4. Short Circuit Withstand Time
0
.5
9
T
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
J
= 150
100
10
.75
o
V
V
V
C, R
CE
CE
V
CE
GE
, COLLECTOR TO EMITTER VOLTAGE (V)
= 390V, R
, COLLECTOR TO EMITTER VOLTAGE (V)
G
11
200
, GATE TO EMITTER VOLTAGE (V)
= 10 , V
1
t
SC
G
T
12
GE
J
GE
300
= 10 , T
= 150
1.25
= 15V, L = 100 H
=15V
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
o
13
C
J
= 125
400
1.50
o
C
14
T
J
= 25
I
500
SC
1.75
o
15
C
T
600
J
2.0
= 125
16
350
300
250
200
150
100
o
C
700
2.25