SGP5N60RUFDTU Fairchild Semiconductor, SGP5N60RUFDTU Datasheet - Page 2

• Manufacturer Part Number: SGP5N60RUFDTU
• Description: IGBT W/DIODE 600V 5A
• Manufacturer: Fairchild Semiconductor

Specifications of SGP5N60RUFDTU

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 5A
• Current - Collector (ic) (max): 8A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
Electrical Characteristics of DIODE
Off Characteristics
BV
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
E
E
E
t
t
t
t
E
E
E
T
Q
Q
Q
L
V
t
I
Q
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
Symbol
Symbol
sc
e
B
T
GE(th)
CE(sat)
on
off
ts
on
off
ts
FM
ies
oes
res
g
ge
gc
rr
J
VCES
CES
/
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
Parameter
Parameter
I
di/dt = 200 A/us
I
F
F
= 8A,
= 8A
V
V
V
V
V
f = 1MHz
V
R
Inductive Load, T
V
R
Inductive Load, T
V
@
V
V
Measured 5mm from PKG
I
I
I
C
C
C
GE
GE
CE
GE
CE
CC
CC
CC
CE
GE
G
G
T
T
C
= 5mA, V
= 5A
= 8A
= 40 , V
= 40 , V
C
= 25 C unless otherwise noted
= V
= 30V
= 300 V, I
= 0V, I
= 0V, I
= V
= 300 V, I
= 300 V, I
= 300 V, V
= 15V
Test Conditions
T
= 100 C
Test Conditions
C
= 25 C unless otherwise noted
,
,
CES
GES
,
C
C
V
V
V
, V
, V
CE
GE
GE
GE
GE
GE
= 250uA
= 1mA
C
C
C
GE
CE
GE
= V
= 15V,
= 15V,
= 15V
= 15V
= 0V,
= 5A,
= 5A,
= 5A,
C
C
= 0V
= 0V
= 15V
T
T
T
T
T
T
T
T
GE
= 25 C
= 125 C
C
C
C
C
C
C
C
C
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
Min.
600
5.0
Min.
10
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
354
136
107
195
250
103
220
323
Typ.
0.6
6.0
2.2
2.5
7.5
124
67
14
13
24
34
88
13
26
40
16
1.4
1.3
3.5
4.5
--
--
--
--
37
55
65
3
7
± 100
Max.
Max.
250
200
280
350
8.5
2.8
138
50
60
24
14
1.7
5.0
55
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
6
--
--
--
--
SGP5N60RUFD Rev. A1
Units
Units
V/ C
nC
nC
nC
nH
uA
nA
pF
pF
pF
nC
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
us
ns
V
V
V
V
V
A