SGP5N60RUFDTU Fairchild Semiconductor, SGP5N60RUFDTU Datasheet - Page 5

• Manufacturer Part Number: SGP5N60RUFDTU
• Description: IGBT W/DIODE 600V 5A
• Manufacturer: Fairchild Semiconductor

Specifications of SGP5N60RUFDTU

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 5A
• Current - Collector (ic) (max): 8A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

©2002 Fairchild Semiconductor Corporation
1000
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristic
100
50
0.1
3
Common Emitter
V
T
T
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
Ic MAX. (Pulsed)
Ic MAX. (Continuous)
C
C
GE
= 25℃ ━━
= 125℃ ------
= ± 15V, R
4
C
= 25℃
Collector-Emitter Voltage, V
Eoff
1
G
5
= 40
0.01
Collector Current, I
0.1
10
1
10
DC Operation
0.5
0.05
0.02
0.2
0.1
0.01
-5
6
10
single pulse
7
Fig 17. Transient Thermal Impedance of IGBT
10
C
[A]
-4
8
1㎳
CE
100
[V]
100us
9
Eon
50us
10
1000
Rectangular Pulse Duration [sec]
10
-3
10
-2
Fig 16. Turn-Off SOA Characteristics
Fig 14. Gate Charge Characteristics
40
15
12
9
6
3
0
0
1
Common Emitter
R
T
C
L
= 60
= 25℃
10
-1
3
Collector-Emitter Voltage, V
Pdm
V
Gate Charge, Q
10
Duty factor D = t1 / t2
Peak Tj = Pdm
CC
6
Safe Operating Area
V
GE
= 100V
= 20V, T
10
t1
0
t2
9
C
= 100℃
Zthjc + T
g
[nC]
100
12
C
10
CE
1
200V
300V
[V]
15
SGP5N60RUFD Rev. A1
1000
18