SGP5N60RUFDTU Fairchild Semiconductor, SGP5N60RUFDTU Datasheet - Page 4

• Manufacturer Part Number: SGP5N60RUFDTU
• Description: IGBT W/DIODE 600V 5A
• Manufacturer: Fairchild Semiconductor

Specifications of SGP5N60RUFDTU

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 5A
• Current - Collector (ic) (max): 8A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

©2002 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 9. Turn-Off Characteristics vs.
Fig 11. Turn-On Characteristics vs.
100
700
600
500
400
300
200
100
100
10
0
3
Common Emitter
V
I
T
T
C
Common Emitter
V
T
T
CC
C
C
Gate Resistance
= 5A
C
C
GE
= 25℃ ━━
= 125℃ ------
Collector Current
= 300V, V
= 25℃ ━━
= 125℃ ------
= ± 15V, R
10
4
1
Collector - Emitter Voltage, V
GE
5
= ± 15V
Gate Resistance, R
G
= 40
Collector Current, I
6
7
G
C
10
[ ]
Common Emitter
V
T
100
[A]
GE
C
8
Coes
= 25℃
Cies
Cres
= 0V, f = 1MHz
CE
[V]
9
Tf
Toff
Toff
Tf
Ton
Tr
10
Fig 8. Turn-On Characteristics vs.
Fig 12. Turn-Off Characteristics vs.
Fig 10. Switching Loss vs. Gate Resistance
1000
1000
100
100
100
10
10
3
Toff
Tf
Tf
Common Emitter
V
I
T
T
C
Gate Resistance
Common Emitter
V
T
T
CC
C
C
= 5A
GE
C
C
= 25℃ ━━
= 125℃ ------
Collector Current
= 300V, V
= 25℃ ━━
= 125℃ ------
Toff
= ± 15V, R
10
10
4
GE
5
Gate Resistance, R
Gate Resistance, R
G
= ± 15V
Collector Current, I
= 40
6
7
Common Emitter
V
I
T
T
C
CC
C
C
= 5A
= 25℃ ━━
= 125℃ ------
G
G
= 300V, V
C
[ ]
[ ]
[A]
100
100
8
GE
9
= ± 15V
SGP5N60RUFD Rev. A1
Eoff
Eon
Eoff
Ton
Tr
10