SGP5N60RUFDTU Fairchild Semiconductor, SGP5N60RUFDTU Datasheet - Page 6

• Manufacturer Part Number: SGP5N60RUFDTU
• Description: IGBT W/DIODE 600V 5A
• Manufacturer: Fairchild Semiconductor

Specifications of SGP5N60RUFDTU

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 5A
• Current - Collector (ic) (max): 8A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

©2002 Fairchild Semiconductor Corporation
Fig 20. Stored Charge
Fig 18. Forward Characteristics
500
400
300
200
100
100
0.1
10
0
1
100
0
T
T
V
I
T
T
F
C
C
R
C
C
= 8A
= 25℃ ━━
= 100℃ ------
= 200V
= 25℃ ━━
= 100℃ ------
Forward Voltage Drop, V
1
di/dt [A/us]
2
F
[V]
3
1000
Fig 19. Reverse Recovery Current
Fig 21. Reverse Recovery Time
100
100
10
80
60
40
20
1
0
100
100
V
I
T
T
F
V
I
T
T
F
C
C
R
= 8A
R
C
C
= 8A
= 25℃ ━━
= 100℃ ------
= 200V
= 200V
= 25℃ ━━
= 100℃ ------
di/dt [A/us]
di/dt [A/us]
SGP5N60RUFD Rev. A1
1000
1000