SGP5N60RUFDTU Fairchild Semiconductor, SGP5N60RUFDTU Datasheet - Page 3

• Manufacturer Part Number: SGP5N60RUFDTU
• Description: IGBT W/DIODE 600V 5A
• Manufacturer: Fairchild Semiconductor

Specifications of SGP5N60RUFDTU

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 5A
• Current - Collector (ic) (max): 8A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

©2002 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics
Fig 3. Saturation Voltage vs. Case
Fig 5. Saturation Voltage vs. V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
25
20
15
10
20
16
12
5
0
8
4
0
-50
0
0
Common Emitter
T
Common Emitter
T
Common Emitter
V
C
C
GE
Temperature at Variant Current Level
= 25℃
= 25℃
= 15V
Collector - Emitter Voltage, V
4
2
0
Gate - Emitter Voltage, V
Case Temperature, T
I
C
= 3A
8
50
20V
4
5A
12
10A
C
[ ℃ ]
GE
GE
100
CE
6
[V]
[V]
16
V
GE
I
C
= 10V
10A
5A
= 3A
12V
15V
150
20
8
Fig 2. Typical Saturation Voltage Characteristics
Fig 4. Load Current vs. Frequency
Fig 6. Saturation Voltage vs. V
20
16
12
10
20
16
12
8
4
0
8
4
0
8
6
4
2
0
0.1
0
Duty cycle : 50%
T
Power Dissipation = 12W
Common Emitter
V
T
T
C
Common Emitter
T
GE
C
C
C
= 100℃
= 25℃ ━━
= 125℃ ------
= 15V
= 125℃
Collector - Emitter Voltage, V
4
Gate - Emitter Voltage, V
1
1
I
C
= 3A
Frequency [KHz]
8
V
Load Current : peak of square wave
CC
= 300V
10
5A
12
10A
GE
GE
CE
100
[V]
[V]
16
10
SGP5N60RUFD Rev. A1
1000
20