MOSFET N-CH 250V 4.4A DPAK

FDD6N25TM

Manufacturer Part NumberFDD6N25TM
DescriptionMOSFET N-CH 250V 4.4A DPAK
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDD6N25TM datasheet
 

Specifications of FDD6N25TM

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1.1 Ohm @ 2.2A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C4.4AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs6nC @ 10VInput Capacitance (ciss) @ Vds250pF @ 25V
Power - Max50WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.9 Ohms
Forward Transconductance Gfs (max / Min)5.5 SDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current4.4 A
Power Dissipation50 WMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Fall Time12 nsRise Time25 ns
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesFDD6N25TMTR
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FDD6N25 / FDU6N25
250V N-Channel MOSFET
Features
• 4.4A, 250V, R
= 1.1Ω @V
DS(on)
GS
• Low gate charge ( typical 4.5 nC)
• Low C
( typical 5 pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D-PAK
G
S
FDD Series
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
Drain Current
D
I
Drain Current
DM
V
Gate-Source voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
T
Operating and Storage Temperature Range
J,
STG
T
Maximum Lead Temperature for Soldering Purpose,
L
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Junction-to-Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDD6N25 / FDU6N25 Rev. A
Description
= 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
I-PAK
G
FDU Series
D
S
Parameter
- Continuous (T
= 25°C)
C
- Continuous (T
= 100°C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(T
= 25°C)
C
- Derate above 25°C
Parameter
1
February 2007
UniFET
D
G
S
FDD6N25 / FDU6N25
Unit
250
V
A
4.4
A
2.6
18
A
±30
V
45
mJ
4.4
A
5
mJ
4.5
V/ns
50
W
0.4
W/°C
°C
-55 to +150
°C
300
Typ
Max
Unit
°C/W
--
2.5
°C/W
--
110
www.fairchildsemi.com
TM

FDD6N25TM Summary of contents

  • Page 1

    ... Symbol R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDD6N25 / FDU6N25 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... Package Marking and Ordering Information Device Marking Device FDD6N25 FDD6N25TM FDD6N25 FDD6N25TF FDU6N25 FDU6N25TU Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T / Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward ...

  • Page 3

    Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15.0 V 10 7.0 V 6.5 V 6.0 V Bottom : 5 Drain-Source ...

  • Page 4

    Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited ...

  • Page 5

    Unclamped Inductive Switching Test Circuit & Waveforms FDD6N25 / FDU6N25 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    FDD6N25 / FDU6N25 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    Mechanical Dimensions FDD6N25 / FDU6N25 Rev. A D-PAK 7 www.fairchildsemi.com ...

  • Page 8

    Mechanical Dimensions FDD6N25 / FDU6N25 Rev. A I-PAK 8 www.fairchildsemi.com ...

  • Page 9

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...