FDD6N25TM Fairchild Semiconductor, FDD6N25TM Datasheet
FDD6N25TM
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FDD6N25TM Summary of contents
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... Symbol R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDD6N25 / FDU6N25 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...
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... Package Marking and Ordering Information Device Marking Device FDD6N25 FDD6N25TM FDD6N25 FDD6N25TF FDU6N25 FDU6N25TU Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T / Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward ...
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Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15.0 V 10 7.0 V 6.5 V 6.0 V Bottom : 5 Drain-Source ...
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Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited ...
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Unclamped Inductive Switching Test Circuit & Waveforms FDD6N25 / FDU6N25 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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FDD6N25 / FDU6N25 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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Mechanical Dimensions FDD6N25 / FDU6N25 Rev. A D-PAK 7 www.fairchildsemi.com ...
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Mechanical Dimensions FDD6N25 / FDU6N25 Rev. A I-PAK 8 www.fairchildsemi.com ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...