FCPF20N60 Fairchild Semiconductor, FCPF20N60 Datasheet

MOSFET N-CH 600V 20A TO220F

FCPF20N60

Manufacturer Part Number
FCPF20N60
Description
MOSFET N-CH 600V 20A TO220F
Manufacturer
Fairchild Semiconductor
Series
SuperFET™r
Datasheet

Specifications of FCPF20N60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
98nC @ 10V
Input Capacitance (ciss) @ Vds
3080pF @ 25V
Power - Max
39W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
17 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
39000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FCPF20N60_NL
FCPF20N60_NL

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©2008 Fairchild Semiconductor Corporation
FCP20N60 / FCPF20N60 Rev. A2
FCP20N60 / FCPF20N60
600V N-Channel MOSFET
Features
• 650V @T
• Typ. R
• Ultra low gate charge (typ. Q
• Low effective output capacitance (typ. C
• 100% avalanche tested
• RoHS Compliant
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
T
STG
DS(on)
J
G
= 150°C
D
= 0.15Ω
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
S
g
TO-220
= 75nC)
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
oss
= 25°C)
.eff = 165pF)
G
C
C
= 25°C)
= 100°C)
D
S
1
Description
SuperFET
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
TO-220F
TM
FCP20N60
FCP20N60
is, Fairchild’s proprietary, new generation of high
12.5
1.67
208
20
60
62.5
0.6
-55 to +150
± 30
20.8
600
690
300
4.5
20
FCPF20N60
FCPF20N60
G
12.5*
SuperFET
20*
60*
0.3
39
62.5
3.2
December 2008
S
D
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FCPF20N60 Summary of contents

Page 1

... Symbol R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2008 Fairchild Semiconductor Corporation FCP20N60 / FCPF20N60 Rev. A2 Description TM SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. .eff = 165pF) This advanced technology has been tailored to minimize con- ...

Page 2

... ≤ 20A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FCP20N60 / FCPF20N60 Rev. A2 Package Reel Size TO-220 - TO-220F - T = 25°C unless otherwise noted C Conditions 250µ 25° ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 10000 9000 8000 7000 C 6000 oss 5000 4000 C iss 3000 2000 C rss 1000 Drain-Source Voltage [V] DS FCP20N60 / FCPF20N60 Rev. A2 Figure 2. Transfer Characteristics Notes : 1. 250 µ s Pulse Test ° Figure 4. Body Diode Forward Voltage 10V 20V ...

Page 4

... J 3. Single Pulse - Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature Case Temperature [ C FCP20N60 / FCPF20N60 Rev. A2 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 Notes : 250 A µ 0.5 D 0.0 100 150 200 -100 C] ° Figure 9-2. Maximum Safe Operating Area ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FCP20N60 Figure 11-2. Transient Thermal Response Curve for FCPF20N60 FCP20N60 / FCPF20N60 Rev. A2 (Continued tio ( ° θ ( θ ° θ θ www.fairchildsemi.com ...

Page 6

... GS GS 3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FCP20N60 / FCPF20N60 Rev. A2 Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FCP20N60 / FCPF20N60 Rev. A2 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 8

... Mechanical Dimensions FCP20N60 / FCPF20N60 Rev 220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP ±0.20 [2.54 ] FCP20N60 / FCPF20N60 Rev. A2 (Continued) TO-220F 10.16 ±0.20 ±0.10 ø3.18 (7.00) (1.00x45°) #1 2.54TYP ±0.20 [2.54 ] ±0.20 9.40 9 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCP20N60 / FCPF20N60 Rev. A2 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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