FCPF20N60 Fairchild Semiconductor, FCPF20N60 Datasheet - Page 5

• Manufacturer Part Number: FCPF20N60
• Description: MOSFET N-CH 600V 20A TO220F
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCPF20N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 3080pF @ 25V
• Power - Max: 39W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 39000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FCPF20N60_NL; FCPF20N60_NL

FCP20N60 / FCPF20N60 Rev. A2
Typical Performance Characteristics
Figure 11-2. Transient Thermal Response Curve for FCPF20N60
Figure 11-1. Transient Thermal Response Curve for FCP20N60
1 0
1 0
1 0
1 0
1 0
1 0
-1
-2
-1
-2
0
1 0
1 0
0
-5
-5
D = 0 .5
0 .0 5
0 .0 2
0 .0 5
0 .0 2
0 .0 1
0 .0 1
D = 0 .5
0 .2
0 .1
0 .2
0 .1
1 0
1 0
s in g le p u ls e
-4
-4
s in g le p u ls e
t
t
1
1
, S q u a r e W a v e P u ls e D u r a t io n [s e c ]
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
1 0
1 0
(Continued)
-3
-3
5
1 0
1 0
-2
-2
P
N o te s :
1 0
1 0
N o te s :
1 . Z
2 . D u ty F a c to r , D = t
3 . T
DM
1 . Z
2 . D u ty F a c to r , D = t
3 . T
P
-1
-1
DM
θ
JM
JC
θ
J M
J C
(t) = 0 .6
- T
( t) = 3 .2
- T
C
t
C
1
= P
t
= P
2
t
1
°
D M
°
t
C /W M a x.
D M
C /W M a x .
2
1 0
1 0
* Z
* Z
0
0
1
θ
/t
1
JC
θ
/t
2
J C
(t)
2
( t)
1 0
1 0
1
1
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