FCPF20N60 Fairchild Semiconductor, FCPF20N60 Datasheet - Page 9

• Manufacturer Part Number: FCPF20N60
• Description: MOSFET N-CH 600V 20A TO220F
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCPF20N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 3080pF @ 25V
• Power - Max: 39W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 39000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FCPF20N60_NL; FCPF20N60_NL

FCP20N60 / FCPF20N60 Rev. A2
Mechanical Dimensions
[2.54
2.54TYP
MAX1.47
0.80
0.35
±0.20
±0.10
±0.10
]
10.16
9.40
#1
(Continued)
(7.00)
±0.20
±0.20
[2.54
2.54TYP
TO-220F
±0.20
ø3.18
9
]
±0.10
(1.00x45°)
0.50
+0.10
–0.05
Dimensions in Millimeters
2.54
2.76
(0.70)
±0.20
±0.20
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