FCPF20N60 Fairchild Semiconductor, FCPF20N60 Datasheet - Page 2

• Manufacturer Part Number: FCPF20N60
• Description: MOSFET N-CH 600V 20A TO220F
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCPF20N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 3080pF @ 25V
• Power - Max: 39W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 39000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FCPF20N60_NL; FCPF20N60_NL

FCP20N60 / FCPF20N60 Rev. A2
Package Marking and Ordering Information
Electrical Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
∆BV
/
BV
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
AS
SD
DS(on)
iss
oss
rss
oss
oss
g
gs
gd
rr
DSS
DS
∆T
= 10A, V
≤ 20A, di/dt ≤ 200A/µs, V
FCPF20N60
DSS
FCP20N60
eff.
J
DD
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 50V, R
G
= 25Ω, Starting T
DD
≤ BV
Parameter
FCPF20N60
FCP20N60
Device
DSS
, Starting T
J
= 25°C
J
= 25°C
T
C
= 25°C unless otherwise noted
Package
TO-220F
TO-220
V
I
V
V
V
V
V
f = 1.0MHz
V
V
R
V
V
V
dI
V
V
V
V
V
V
V
D
GS
GS
GS
DS
DS
GS
GS
DS
GS
DS
DS
DS
DS
DD
G
DS
GS
GS
GS
F
= 250µA, Referenced to 25°C
/dt =100A/µs
= 25Ω
= 0V, I
= 0V, I
= 0V, I
= 600V, V
= 480V, T
= 30V, V
= -30V, V
= V
= 10V, I
= 40V, I
= 25V, V
= 480V, V
= 0V to 400V, V
= 300V, I
= 480V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
D
D
S
S
D
D
D
Conditions
= 250µA, T
= 250µA, T
= 20A
= 20A
= 20A
GS
DS
D
D
DS
= 10A
C
= 10A
GS
= 250µA
GS
= 20A
= 20A
Reel Size
= 125°C
= 0V
= 0V,
= 0V
= 0V
= 0V, f = 1.0MHz
GS
-
-
= 0V
J
J
= 25°C
= 150°C
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min
600
-
-
3.0
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Typ
2370
1280
0.15
13.5
10.5
650
700
165
140
230
530
0.6
17
95
65
62
65
75
36
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Quantity
Max Units
3080
1665
-100
0.19
www.fairchildsemi.com
100
135
290
470
140
5.0
1.4
10
85
98
18
20
60
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1
50
50
V/°C
nC
nC
nC
µC
µA
µA
nA
nA
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
V
V
S
A
A
V