FCPF20N60 Fairchild Semiconductor, FCPF20N60 Datasheet - Page 3

• Manufacturer Part Number: FCPF20N60
• Description: MOSFET N-CH 600V 20A TO220F
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCPF20N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 3080pF @ 25V
• Power - Max: 39W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 39000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FCPF20N60_NL; FCPF20N60_NL

FCP20N60 / FCPF20N60 Rev. A2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
10000
10
10
10
9000
8000
7000
6000
5000
4000
3000
2000
1000
2
1
0
10
0.4
0.3
0.2
0.1
0.0
0
10
-1
Top :
Bottom :
0
-1
Drain Current and Gate Voltage
5
15.0 V
10.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
V
10
GS
15
V
C
V
DS
20
rss
C
DS
, Drain-Source Voltage [V]
iss
C
, Drain-Source Voltage [V]
oss
10
25
I
10
D
0
, Drain Current [A]
0
30
35
V
40
GS
= 10V
45
C
C
C
iss
oss
rss
50
Notes :
= C
= C
= C
10
1. 250
2. T
10
gs
1
gd
Note : T
ds
1
V
C
+ C
+ C
55
GS
= 25
µ
s Pulse Test
gd
= 20V
gd
Notes :
(C
°
1. V
2. f = 1 MHz
J
C
60
= 25
ds
= shorted)
GS
°
= 0 V
C
65
70
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
12
10
8
6
4
2
0
2
1
0
0.2
0
10
10
10
2
1
0
2
10
Variation vs. Source Current
0.4
and Temperatue
150
20
°
C
V
0.6
Q
SD
4
25
V
G
, Total Gate Charge [nC]
°
, Source-Drain Voltage [V]
GS
C
150
30
, Gate-Source Voltage [V]
25
°
C
°
0.8
C
V
DS
V
DS
= 400V
40
V
= 250V
DS
6
= 100V
1.0
-55
50
°
C
1.2
Notes :
1. V
2. 250
60
Note : I
Note
1. V
2. 250
GS
µ
8
= 0V
DS
s Pulse Test
D
= 40V
µ
s Pulse Test
= 20A
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1.4
70
1.6
80
10