FCPF20N60 Fairchild Semiconductor, FCPF20N60 Datasheet - Page 6

• Manufacturer Part Number: FCPF20N60
• Description: MOSFET N-CH 600V 20A TO220F
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCPF20N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 3080pF @ 25V
• Power - Max: 39W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 39000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FCPF20N60_NL; FCPF20N60_NL

FCP20N60 / FCPF20N60 Rev. A2
10V
10V
10V
10V
12V
12V
t
t
p
p
3mA
3mA
200nF
200nF
R
R
R
R
G
G
G
G
50KΩ
50KΩ
V
V
V
V
GS
GS
GS
GS
Unclamped Inductive Switching Test Circuit & Waveforms
V
V
300nF
300nF
V
V
I
I
I
DS
DS
D
D
D
DS
DS
Resistive Switching Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
DUT
DUT
DUT
DUT
Same Type
Same Type
DUT
DUT
L
L L
as DUT
as DUT
R
R
L
L
V
V
DD
DD
V
V
DD
DD
6
V
V
DS
DS
BV
BV
V
V
V
V
10V
10V
DSS
DSS
V
V
I
I
V
V
GS
GS
DD
DD
AS
AS
DS
DS
GS
GS
E
E
E
10%
10%
AS
AS
AS
Q
Q
90%
90%
=
=
=
gs
gs
t
t
d(on)
d(on)
----
----
----
----
1
1
1
1
2
2
2
2
t
t
on
on
L I
L I
L I
t
t
r
r
I
I
AS
AS
AS
D
D
Q
Q
(t)
(t)
t
t
2
2
2
Q
Q
p
p
g
g
gd
gd
Charge
Charge
--------------------
--------------------
BV
BV
BV
BV
DSS
DSS
DSS
DSS
t
t
- V
- V
d(off)
d(off)
t
t
DD
DD
off
off
Time
Time
t
t
f
f
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V
V
DS
DS
(t)
(t)