MC9S12XDT512CAA Freescale, MC9S12XDT512CAA Datasheet - Page 1037
MC9S12XDT512CAA
Manufacturer Part Number
MC9S12XDT512CAA
Description
Manufacturer
Freescale
Datasheet
1.MC9S12XDT512CAA.pdf
(1348 pages)
Specifications of MC9S12XDT512CAA
Cpu Family
HCS12
Device Core Size
16b
Frequency (max)
40MHz
Interface Type
CAN/I2C/SCI/SPI
Total Internal Ram Size
32KB
# I/os (max)
59
Number Of Timers - General Purpose
12
Operating Supply Voltage (typ)
2.5/5V
Operating Supply Voltage (max)
2.75/5.5V
Operating Supply Voltage (min)
2.35/3.15V
On-chip Adc
8-chx10-bit
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
80
Package Type
PQFP
Program Memory Type
Flash
Program Memory Size
512KB
Lead Free Status / RoHS Status
Compliant
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Quantity
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Chapter 25
2 Kbyte EEPROM Module (S12XEETX2KV1)
25.1
This document describes the EETX2K module which includes a 2Kbyte EEPROM (nonvolatile) memory.
The EEPROM memory may be read as either bytes, aligned words, or misaligned words. Read access time
is one bus cycle for bytes and aligned words, and two bus cycles for misaligned words.
The EEPROM memory is ideal for data storage for single-supply applications allowing for field
reprogramming without requiring external voltage sources for program or erase. Program and erase
functions are controlled by a command driven interface. The EEPROM module supports both block erase
(all memory bytes) and sector erase (4 memory bytes). An erased bit reads 1 and a programmed bit reads
0. The high voltage required to program and erase the EEPROM memory is generated internally. It is not
possible to read from the EEPROM block while it is being erased or programmed.
25.1.1
Command Write Sequence — A three-step MCU instruction sequence to execute built-in algorithms
(including program and erase) on the EEPROM memory.
25.1.2
25.1.3
Program, erase and erase verify operations (please refer to
Operations”
Freescale Semiconductor
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2 Kbytes of EEPROM memory divided into 512 sectors of 4 bytes
Automated program and erase algorithm
Interrupts on EEPROM command completion and command buffer empty
Fast sector erase and word program operation
2-stage command pipeline
Sector erase abort feature for critical interrupt response
Flexible protection scheme to prevent accidental program or erase
Single power supply for all EEPROM operations including program and erase
Introduction
Glossary
Features
Modes of Operation
for details).
An EEPROM word (2 bytes) must be in the erased state before being
programmed. Cumulative programming of bits within a word is not allowed.
MC9S12XDP512 Data Sheet, Rev. 2.21
CAUTION
Section 25.4.1, “EEPROM Command
1039
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