EP1S80B956C7N Altera, EP1S80B956C7N Datasheet - Page 381

• Manufacturer Part Number: EP1S80B956C7N
• Description: IC STRATIX FPGA 80K LE 956-BGA
• Manufacturer: Altera
• Series: Stratix®r

Specifications of EP1S80B956C7N

• Number Of Logic Elements/cells: 79040
• Number Of Labs/clbs: 7904
• Total Ram Bits: 7427520
• Number Of I /o: 683
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 956-BGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Number Of Gates: -

Altera Corporation
July 2005
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In true dual-port configuration, the RAM outputs can only be configured
for read-during-write mode. This means that during write operation,
data being written to the A or B port of the RAM flows through to the A
or B outputs, respectively. When the output registers are bypassed, the
new data is available on the rising edge of the same clock cycle it was
written on. For waveforms and information on mixed-port read-during-
write mode, see
page
Potential write contentions must be resolved external to the RAM because
writing to the same address location at both ports results in unknown
data storage at that location. Data is written on the rising edge of the write
clock for the M-RAM block. For a valid write operation to the same
address of the M-RAM block, the rising edge of the write clock for port A
must occur following the maximum write cycle time interval after the
rising edge of the write clock for port B. Since data is written into the
M512 and M4K blocks at the falling edge of the write clock, the rising
edge of the write clock for port A should occur following half of the
maximum write cycle time interval after the falling edge of the write clock
for port B. If this timing is not met, the data stored in that particular
address is invalid.
See the Stratix Device Family Data Sheet section of the Stratix Device
Handbook, Volume 1 or the Stratix GX Device Family Data Sheet section of
the Stratix GX Device Handbook, Volume 1 for the maximum synchronous
write cycle time.
Figure 2–7
port A and read operation at port B.
Table 2–11. M-RAM Block Mixed-Port Width Configurations (True Dual-Port)
2–25.
32K
16K
64K
8K
TriMatrix Embedded Memory Blocks in Stratix & Stratix GX Devices
Port A
shows true dual-port timing waveforms for write operation at
72
18
36
9
“Read-During-Write Operation at the Same Address” on
64K
v
v
v
v
9
32K
Stratix Device Handbook, Volume 2
v
v
v
v
18
Port B
16K
v
v
v
v
36
8K
v
v
v
v
72
2–13