PSMN015-110P NXP Semiconductors, PSMN015-110P Datasheet - Page 11

• Manufacturer Part Number: PSMN015-110P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-110P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0405 Ohms
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: PSMN015-110P,127

NXP Semiconductors
8. Revision history
Table 7.
PSMN015-110P_2
Product data sheet
Document ID
PSMN015-110P_2
Modifications:
PSMN015_110P-01
Revision history
Release date
20091006
20040108
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 6 October 2009
N-channel TrenchMOS SiliconMAX standard level FET
Change notice
-
-
PSMN015-110P
Supersedes
PSMN015_110P-01
-
© NXP B.V. 2009. All rights reserved.
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