PSMN015-110P NXP Semiconductors, PSMN015-110P Datasheet - Page 7

• Manufacturer Part Number: PSMN015-110P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-110P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0405 Ohms
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: PSMN015-110P,127

NXP Semiconductors
PSMN015-110P_2
Product data sheet
Fig 5.
Fig 7.
(A)
I
(A)
10
10
10
10
10
10
D
I
D
80
60
40
20
−1
−2
−3
−4
−5
−6
0
gate-source voltage
function of gate-source voltage; typical values
Sub-threshold drain current as a function of
Transfer characteristics: drain current as a
0
0
V
DS
> I
D
x R
DSon
2
2
min
175 °C
typ
4
4
max
V
V
T
GS
GS
j
= 25 °C
(V)
03am56
(V)
03aa35
Rev. 02 — 6 October 2009
6
6
N-channel TrenchMOS SiliconMAX standard level FET
Fig 6.
Fig 8.
V
GS(th)
(A)
(V)
I
D
50
40
30
20
10
0
5
4
3
2
1
0
−60
function of drain-source voltage; typical values
junction temperature
Output characteristics: drain current as a
Gate-source threshold voltage as a function of
0
T
j
= 25 °C
0.2
0
0.4
PSMN015-110P
60
max
min
typ
10 V
0.6
6 V 5.6 V 5.4 V
120
V
5.6 V
5.6 V
© NXP B.V. 2009. All rights reserved.
GS
0.8
T
V
j
= 4.2 V
DS
(°C)
03am54
03aa32
5.2 V
4.8 V
4.6 V
4.4 V
5 V
(V)
180
1
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