PSMN015-110P NXP Semiconductors, PSMN015-110P Datasheet - Page 2

• Manufacturer Part Number: PSMN015-110P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-110P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0405 Ohms
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: PSMN015-110P,127

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN015-110P_2
Product data sheet
Pin
1
2
3
mb
Type number
PSMN015-110P
Symbol
G
D
S
D
Pinning information
Ordering information
TO-220AB
Package
Name
Description
gate
drain
source
mounting base; connected to
drain
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Rev. 02 — 6 October 2009
N-channel TrenchMOS SiliconMAX standard level FET
Simplified outline
(TO-220AB)
SOT78
1 2
mb
3
PSMN015-110P
Graphic symbol
G
mbb076
© NXP B.V. 2009. All rights reserved.
D
Version
SOT78
S
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