PSMN015-110P NXP Semiconductors, PSMN015-110P Datasheet - Page 3

• Manufacturer Part Number: PSMN015-110P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-110P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0405 Ohms
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: PSMN015-110P,127

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN015-110P_2
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalnche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
T
mb
Conditions
T
T
V
V
t
T
T
t
V
V
R
p
p
j
j
mb
mb
03an67
GS
GS
GS
sup
GS
(°C)
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≤ 175 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
200
= 50 Ω
≤ 50 V; unclamped; t
Rev. 02 — 6 October 2009
j
≤ 175 °C
j
mb
mb
j(init)
≥ 25 °C; R
N-channel TrenchMOS SiliconMAX standard level FET
= 25 °C; see
= 100 °C; see
Figure 2
= 25 °C; I
Fig 2.
mb
mb
P
(%)
= 25 °C; see
= 25 °C
der
120
GS
p
80
40
0
= 0.11 ms;
function of mounting base temperature
D
Normalized total power dissipation as a
0
= 20 kΩ
= 36 A;
Figure 1
Figure 1
Figure 3
50
and
3
PSMN015-110P
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2009. All rights reserved.
T
mb
Max
110
110
20
75
60.8
240
300
175
175
75
240
320
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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