ATtiny25 Automotive Atmel Corporation, ATtiny25 Automotive Datasheet - Page 140

• Manufacturer Part Number: ATtiny25 Automotive
• Manufacturer: Atmel Corporation

Specifications of ATtiny25 Automotive

• Flash (kbytes): 2 Kbytes
• Pin Count: 8
• Max. Operating Frequency: 16 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 4
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 6
• Ext Interrupts: 6
• Usb Speed: No
• Usb Interface: No
• Spi: 1
• Twi (i2c): 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 4
• Adc Resolution (bits): 10
• Adc Speed (ksps): 15
• Analog Comparators: 1
• Resistive Touch Screen: No
• Temp. Sensor: Yes
• Crypto Engine: No
• Sram (kbytes): 0.12
• Eeprom (bytes): 128
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 125
• I/o Supply Class: 2.7 to 5.5
• Operating Voltage (vcc): 2.7 to 5.5
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 2
• Output Compare Channels: 5
• Pwm Channels: 6
• 32khz Rtc: No
• Calibrated Rc Oscillator: Yes

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ATtiny25/45/85
Table 21-9.
Figure 21-2. Serial Programming Waveforms
Table 21-10. Serial Programming Instruction Set
Symbol
t
t
t
t
Instruction
Programming Enable
Chip Erase
Read Program
Memory
Load Program
Memory Page
Write Program
Memory Page
Read EEPROM
Memory
Write EEPROM
Memory
WD_FLASH
WD_EEPROM
WD_ERASE
WD_FUSE
SERIAL DATA OUTPUT
SERIAL CLOCK INPUT
SERIAL DATA INPUT
Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
SAMPLE
(MOSI)
(MISO)
(SCK)
Byte 1
1010
1100
1010
1100
0010
H000
0100
H000
0100
1100
1010
0000
1100
0000
MSB
MSB
Instruction Format
Byte 2
0101
0011
100x
xxxx
0000
000a
000x
xxxx
0000
000a
000x
xxxx
000x
xxxx
Byte 3
xxxx
xxxx
xxxx
xxxx
bbbb
bbbb
xxxb
bbbb
bbxx
xxxx
xxbb
bbbb
xxbb
bbbb
Minimum Wait Delay
Byte4
xxxx
xxxx
xxxx
xxxx
oooo
oooo
iiii
iiii
xxxx
xxxx
oooo
oooo
iiii
iiii
4.5 ms
4.0 ms
4.0 ms
4.5 ms
Operation
Enable Serial Programming
after RESET goes low.
Chip Erase EEPROM and
Flash.
Read H (high or low) data o
from Program memory at
word address a:b.
Write H (high or low) data i to
Program memory page at
word address b. Data low
byte must be loaded before
Data high byte is applied
within the same address.
Write Program memory Page
at address a:b.
Read data o from EEPROM
memory at address b.
Write data i to EEPROM
memory at address b.
LSB
LSB
7598H–AVR–07/09