BLF6G15LS-500H NXP Semiconductors, BLF6G15LS-500H Datasheet - Page 10

• Manufacturer Part Number: BLF6G15LS-500H
• Description: A 500W LDMOS RF power transistor for transmitter applications and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Handling information
10. Abbreviations
11. Revision history
Table 11.
BLF6G15L-500H_6G15LS-500H
Product data sheet
CAUTION
Document ID
BLF6G15L-500H_6G15LS-500H v.2 20110916
Modifications:
BLF6G15L-500H_6G15LS-500H v.1 20110511
Revision history
Table 10.
Acronym
CCDF
DVB-T
DVB
ESD
LDMOS
LDMOST
OFDM
PAR
RF
SMD
TTF
VSWR
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Abbreviations
Release date
BLF6G15L-500H; BLF6G15LS-500H
•
All information provided in this document is subject to legal disclaimers.
The status of this data sheet has been changed to Product data sheet
Description
Complementary Cumulative Distribution Function
Digital Video Broadcast - Terrestrial
Digital Video Broadcast
ElectroStatic Discharge
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Peak-to-Average power Ratio
Radio Frequency
Surface Mounted Device
Time To Failure
Voltage Standing-Wave Ratio
Rev. 2 — 16 September 2011
Data sheet status
Product data sheet
Objective data sheet
Change notice
-
-
Power LDMOS transistor
Supersedes
BLF6G15L-500H_6G
15LS-500H v.1
-
© NXP B.V. 2011. All rights reserved.
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