BLF6G15LS-500H NXP Semiconductors, BLF6G15LS-500H Datasheet - Page 4

• Manufacturer Part Number: BLF6G15LS-500H
• Description: A 500W LDMOS RF power transistor for transmitter applications and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Application information
BLF6G15L-500H_6G15LS-500H
Product data sheet
Fig 2.
(dB)
G
p
18
16
14
12
10
0
V
2-Tone power gain and drain efficiency as
function of average load power; typical values
DS
= 50 V; I
7.2.1 2-Tone
7.1 Impedance information
7.2 Graphs
100
Dq
= 1.3 A; f = 1490 MHz.
Table 8.
Typical values per section unless otherwise specified.
f
MHz
1452
1472
1492
Fig 1.
200
Definition of transistor impedance
Typical impedance
300
BLF6G15L-500H; BLF6G15LS-500H
P
η
G
All information provided in this document is subject to legal disclaimers.
L(AV)
D
001aao061
p
(W)
Rev. 2 — 16 September 2011
400
40
30
20
10
0
(%)
η
D
Z

1.226  j2.663
1.375  j2.757
1.15  j2.735
S
Fig 3.
gate
Z
(dB)
G
S
p
18
16
14
12
10
0
V
2-Tone power gain and third order
intermodulation distortion as function of
average load power; typical values
DS
= 50 V; I
001aaf059
Z
drain
L
100
Dq
= 1.3 A; f = 1490 MHz.
Z

2.137  j2.750
1.869  j2.378
1.817  j2.684
200
L
Power LDMOS transistor
IMD3
300
© NXP B.V. 2011. All rights reserved.
P
G
L(AV)
001aao062
p
(W)
400
0
-12
-24
-36
-48
IMD3
(dBc)
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