BLF6G15LS-500H NXP Semiconductors, BLF6G15LS-500H Datasheet - Page 6

• Manufacturer Part Number: BLF6G15LS-500H
• Description: A 500W LDMOS RF power transistor for transmitter applications and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G15L-500H_6G15LS-500H
Product data sheet
7.2.3 Reliability
Fig 8.
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
Years
10
10
10
10
10
10
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)  1 / .
BLF6G15LS-500H electromigration (I
1
6
5
4
3
2
j
j
j
j
j
j
j
= 100 C
= 120 C
= 140 C
= 146 C
= 160 C
= 180 C
= 200 C
0
BLF6G15L-500H; BLF6G15LS-500H
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 September 2011
(5)
(6)
(7)
5
10
DS(DC)
, total device)
15
Power LDMOS transistor
(1)
(2)
(3)
(4)
l
DS(DC)
001aao067
(A)
© NXP B.V. 2011. All rights reserved.
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