BLF6G15LS-500H NXP Semiconductors, BLF6G15LS-500H Datasheet - Page 3

• Manufacturer Part Number: BLF6G15LS-500H
• Description: A 500W LDMOS RF power transistor for transmitter applications and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
BLF6G15L-500H_6G15LS-500H
Product data sheet
6.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
RF characteristics in NXP class-AB production circuit, in frequency range 1452 MHz to 1492 MHz;
T
[1]
[2]
The BLF6G15L-500H and BLF6G15LS-500H are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol
R
Symbol Parameter
V
I
I
g
Symbol
I
P
G

IMD
PAR
V
I
R
DVB-T (8k OFDM), class-AB
V
DSS
DSX
GSS
Dq
j
case
fs
D
(BR)DSS
GS(th)
DS
L(AV)
th(j-case)
DS(on)
p
= 25
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
shldr
= 25

C; per section unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V

Parameter
thermal resistance from junction to case T
C.
Thermal characteristics
DC characteristics
RF characteristics
Parameter
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
DS
BLF6G15L-500H; BLF6G15LS-500H
All information provided in this document is subject to legal disclaimers.
= 50 V; I
Rev. 2 — 16 September 2011
Dq
= 1.3 A at rated power.
Conditions
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 9.5 A
Conditions
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
GS(th)
GS(th)
Conditions
case
D
DS
D
D
= 2.7 mA
+ 3.75 V;
+ 3.75 V;
DS
= 85 C; P
= 270 mA
= 270 mA
= 50 V
= 0 V
[1]
[2]
L
Min
-
-
-
14.5
16
-
8.5
Power LDMOS transistor
= 65 W
Min
100
1.4
-
38
-
1.33
-
Typ
50
1.3
65
16
19
32
9
© NXP B.V. 2011. All rights reserved.
Typ
-
1.8
-
42
-
2.3
100
Max
-
-
-
-
30
-
Typ
0.18
-
Max Unit
-
2.4
2.8
-
280 nA
-
193 m
3 of 13
Unit
V
A
W
dB
%
dBc
dB
Unit
K/W
V
V
A
A
S