BLF6G15LS-500H NXP Semiconductors, BLF6G15LS-500H Datasheet - Page 5

• Manufacturer Part Number: BLF6G15LS-500H
• Description: A 500W LDMOS RF power transistor for transmitter applications and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G15L-500H_6G15LS-500H
Product data sheet
Fig 4.
Fig 6.
PAR
(dB)
(dB)
G
p
17
16
15
14
13
10
9
8
7
6
5
1400
0
V
DVB-T power gain and intermodulation
distortion shoulder as function of average load
power; typical values
V
DVB-T peak-to-average ratio and drain
efficiency as function of frequency; typical
values
DS
DS
= 50 V; I
= 50 V; I
7.2.2 DVB-T
100
Dq
Dq
1450
= 1.3 A; f = 1490 MHz.
= 1.3 A; P
200
PAR
η
L(AV)
D
1500
IMD
= 65 W.
G
p
300
BLF6G15L-500H; BLF6G15LS-500H
shldr
f (MHz)
P
All information provided in this document is subject to legal disclaimers.
L(AV)
001aao063
001aao065
(W)
Rev. 2 — 16 September 2011
1550
400
IMD
-5
-15
-25
-35
-45
25
23
21
19
17
15
(dBc)
(%)
η
D
shldr
Fig 5.
Fig 7.
PAR
(dB)
(dB)
G
p
12
20
15
10
8
4
0
5
1400
0
V
DVB-T peak-to-average ratio and drain
efficiency as function of average load power;
typical values
V
DVB-T power gain and intermodulation
distortion shoulder as a function of frequency;
typical values
DS
DS
= 50 V; I
= 50 V; I
100
Dq
Dq
1450
= 1.3 A; f = 1490 MHz.
= 1.3 A; P
200
IMD
PAR
G
η
Power LDMOS transistor
L(AV)
D
p
shldr
1500
= 65 W.
300
f (MHz)
© NXP B.V. 2011. All rights reserved.
P
L(AV)
001aao064
001aao066
(W)
1550
400
40
30
20
10
0
-10
-20
-30
-40
-50
IMD
(dBc)
(%)
η
D
shldr
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