BLF6G15LS-500H NXP Semiconductors, BLF6G15LS-500H Datasheet - Page 7

• Manufacturer Part Number: BLF6G15LS-500H
• Description: A 500W LDMOS RF power transistor for transmitter applications and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G15L-500H_6G15LS-500H
Product data sheet
Fig 9.
C13
C14
C15
Printed-Circuit Board (PCB): Rogers 4350; 
See
Component layout for class-AB common source amplifier
C16
Table 9
C17
R3
7.3 Test circuit
5 mm
for list of components.
C19
17 mm
C18
Table 9.
See
Component
C6, C11
C12, C13
C18, C19
C15
R1, R2
R3
C1
C2, C7, C16, C17
C3, C8
C4, C5, C9, C10
60 mm
8 mm
8 mm
Figure 9
R1
R2
List of components
for component layout.
BLF6G15L-500H; BLF6G15LS-500H
All information provided in this document is subject to legal disclaimers.
Description
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
SMD resistor
Rev. 2 — 16 September 2011
r
= 3.66; thickness = 0.30 mm; thickness copper plating = 35 m.
50 mm
5 mm
5 mm
C11 C9
C10
C6 C4
C5
470 F, 63 V
10 nF
470 F; 63 V
5R1 
470  (not fitted)
Value
10 F
6.2 pF
1.0 F
22 pF
22 pF
60 mm
C3
C8
23 mm
23 mm
Power LDMOS transistor
C2
14 mm
14 mm
C7
© NXP B.V. 2011. All rights reserved.
001aao068
Vds
C12
C1
Remarks
Elco
TDK
ATC800B
1206 10 %
1205 10 %
ATC800B
ATC800B
0805
1206
25 mm
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